Fujimi Incorporated

Koichi Sakabe

Yukinobu Yoshizaki

Satoru Yarita

Kenichi Komoto

Shuugo Yokota

Shogo Onishi

Tomohiko Akatsuka

Yoshihiro Izawa

Yasuyuki Yamato

Shota Suzuki

Yusuke Kadohashi

Takeki Sato

Chiaki Saito

The present invention provides a polishing composition with which it is possible to decrease a level difference to be unintentionally generated between dissimilar materials and a level difference to be unintentionally generated between coarse and dense portions of a pattern. The present invention relates to a polishing composition which contains abrasive grains having an average primary particle size of 5 to 50 nm, a level difference modifier containing a compound with a specific structure, having an aromatic ring and a sulfo group or a salt group thereof which is directly bonded to this aromatic ring, and a dispersing medium and of which the pH is less than 7.

Polishing composition, production method therefor, and polishing method and production method for substrate, using polishing composition

The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria. The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SOor NOpartial structure-containing compound having a partial structure represented by SOor NO(where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.

Composition for surface treatment, method for producing the same, and surface treatment method using the same

A surface treatment composition according to the present invention is used for treating a surface of a polished object to be polished which is obtained after polishing with a polishing composition including ceria, using the surface treatment composition including a (co)polymer having a monomer-derived structural unit having a carboxyl group or a salt group thereof, a residue removing accelerator composed of a specific compound having a hydroxyl group, and a dispersing medium, wherein pH is less than 7.

Surface treatment composition, preparation method thereof, surface treatment method using the same

An object of the present invention is to provide a polishing composition which can sufficiently improve a polishing speed of an object to be polished having a silicon-oxygen bond such as a silicon oxide film or a polishing speed of an object to be polished having a silicon-nitrogen bond such as a silicon nitride film. Providing a polishing composition including: (1) an organic compound which has an action site interacting with an object to be polished having a silicon-oxygen bond or a silicon-nitrogen bond and an acceleration site accelerating an access of a component polishing an object to be polished to the object to be polished; (2) abrasive grains; and (3) a dispersing medium.

Polishing composition

To provide a technology by which, on the occasion of polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b) can be increased. The polishing composition of the present invention is a polishing composition used for polishing an object to be polished including: (a) material having silicon-nitrogen bonds; and (b) other material, the polishing composition including: an organic acid-immobilized silica; and a particular selection ratio improver for increasing the ratio of the polishing speed for the material (a) with respect to the polishing speed for the material (b).

The purpose of the present invention is to provide a means to sufficiently remove impurities remaining on the surface of a polishing object after CMP. The polishing composition of the present invention is a polishing composition which is used after polishing has been performed by using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including an organic compound (B) which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom and has a molecular weight of 100 or more, a pH adjusting agent, and 0 to 1% by mass of abrasive grains.

Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. The invention is a polishing composition which contains silica having an organic acid immobilized on a surface thereof, a dihydric alcohol having a molecular weight of less than 20,000 and a pH adjusting agent, the polishing composition having a pH of 6 or less.

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Kiyosu, Japan

Koichi Sakabe