Sumitomo Chemical Company, Limited

Nippon Shokubai Kagaku Kogyo Co., Ltd.

Sanyo Electric Co., Ltd.

Other

Nippon Shokubai Co., Ltd.

Sansha Electric Manufacturing Company, Limited

Unicorn Electronics Company, Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Koichi Saito

Makoto Horiuchi

Yasuyuki Yanase

Tetsuji Ono

Takashi Ohara

Yasuo Ikeda

Akira Inoue

Yukio Aoki

Yoshikazu Ibara

Kenji Ueda

Ryoichi Murakami

Tatsuhiko Koide

Norihisa Ohe

Daichi Suma

Yasutake Mino

Ryosuke Usui

Satoshi Ando

Takahiro Fujii

Yoshio Okayama

Tetsuya Yamamoto

Mayumi Nakasato

Yasuhiro Kohara

Junichi Ishikawa

Masaki Mori

Yasuo Nanbu

Hajime Kobayashi

Koichiro Komai

Takehiko Suzuki

Kiyoshi Higashi

Masahiro Aoyama

Shoichi Ichihara

Kazunori Inami

Koshi Horie

Satoshi Inui

Toshimasa Kushihara

Atsunobu Suzuki

Noriyuki Suzuki

Noboru Miyake

Nobuyuki Horie

Masao Hirose

Katsunobu Matsuyoshi

Nobuo Nakatani

Ko Fujimori

Hideo Satoh

Kentaro Kobayashi

Disclosed are an antibody or a functional fragment thereof binding to 3'-sialyl lactose and comprising a heavy chain variable region which is optionally substituted with 3 or less amino acids and which comprises a CDR sequence consisting of an amino acid sequence ARKNGGLDYAMDY (SEQ ID NO: 3), a polynucleotide encoding the antibody or the functional fragment thereof, an expression vector comprising the polynucleotide, and a test drug for a disease and a pharmaceutical composition comprising the antibody or the functional fragment thereof.

Antibody and functional fragment thereof

The present invention provides a method for assessing embryotoxicity of a chemical comprising: (1) a first step of measuring the expression level of one or more genes selected from among genes each comprising any of the nucleotide sequences of SEQ ID NOs: 1 to 78 and 101 to 230 and orthologous genes thereof in a sample from a non-human mammal or mammalian cell which has come into contact with a test chemical; and (2) a second step of comparing the measured value of the expression level of the gene in the sample obtained in the first step with a control value of the expression level of the gene and based on the difference assessing the level of the embryotoxicity of the test chemical in the sample; and so on.

Method for assessing embryotoxicity

After a microcrystalline layer having a grain size that is finer than that of a base member is formed on the surface of at least one of a first bonding portion and a second bonding portion, the gap between the first bonding portion and the second bonding portion is filled with a solution into which copper oxide can be eluted, so as to deposit copper oxide contained in the surface oxide film into the solution. By applying pressure and by heating at a temperature of at most the copper recrystallization temperature, the components contained in the solution are removed except for copper, so as to elute copper oxide, thereby bonding the first bonding portion and the second bonding portion via the copper thus deposited. Subsequently, the copper is solid-phase diffused into the first bonding portion and the second bonding portion.

Metal bonded structure and metal bonding method

A compound depicted by the formula below, or a pharmaceutically acceptable salt or solvate thereof. 

Agent for treatment or prevention of diseases associated with activity of neurotrophic factors

The gap between first and second bonding portions is filled with a disperse solution obtained by dispersing copper micro-particles into a solution for copper oxide elution, so as to elute copper oxide configured as the outermost layer of the first bonding portion and copper oxide configured as the outermost layer of the second bonding portion, and copper oxide formed on the surface of each copper micro-particle. Pressure is applied to the first and second bonding portions using a press machine so as to raise the pressure of the disperse solution. At the same time, heat is applied under a relatively low temperature condition of 200&#xb0; C. to 300&#xb0; C., so as to remove the components contained in the disperse solution except for copper, thereby depositing copper. Thus, a first base portion and a second base portion are bonded via a copper bonded portion containing copper derived from the copper micro-particles.

Metal bonding method and metal bonded structure

A semiconductor substrate and a copper sheet stacked with an insulating resin layer are bonded together at a temperature of 130&#xb0; C. or below (first temperature) so that an element electrode provided on the semiconductor substrate connects to the copper sheet before a thinning process. Then the semiconductor substrate and the copper sheet, on which the insulating resin layer has been stacked, are press-bonded at a high temperature of 170&#xb0; C. or above (second temperature) with the copper sheet thinned to thickness of a wiring layer. Then the wiring layer (rewiring) is formed by patterning the thinned copper sheet.

Method for manufacturing a circuit device

A semiconductor element mounted on an insulating resin layer formed on a wiring layer is sealed by a sealing resin. On the wiring layer, a protruding electrode protruding to the side of the semiconductor element and a protruding section are integrally formed with the wiring layer, respectively. The protruding electrode is electrically connected to an element electrode of the semiconductor element by penetrating the insulating resin layer. The protruding section is arranged to surround the semiconductor element along the four sides of the semiconductor element, and is embedded in the sealing resin up to a position above a section where the protruding electrode and the element electrode are bonded.

Semiconductor module and portable apparatus provided with semiconductor module

In a semiconductor module having the structure in which a bump electrode provided on a wiring layer is connected to a device electrode provided on a semiconductor device, connection reliability between the bump electrode and the device electrode is improved. An insulating resin layer is provided between the semiconductor device and the wiring layer. The bump electrode, formed integrally with the wiring layer and projected from the wiring layer toward the insulating resin layer, is electrically connected to the device electrode provided on the semiconductor device. Part of the height of the wiring layer on the end side in a bump connection area is lower than that of the wiring in a wiring area extending toward the side opposite to the end side.

Device mounting board and semiconductor module

A semiconductor module includes: an insulating resin layer; a wiring layer which is provided on one main surface of the insulating resin layer and which includes an external connection region; bump electrodes which are electrically connected to the wiring layer and each of which is formed such that it protrudes from the wiring layer toward the insulating resin layer; a semiconductor device which is provided on the other main surface of the insulating resin layer and which includes device electrodes connected to the bump electrode; and a wiring protection layer provided on the wiring layer and the insulating resin layer so as to expose the external connection region. In the semiconductor module, the outer edge portion of the wiring protection layer is in contact with the external edge portion of the semiconductor device such that it shields at least a part of the semiconductor resin layer at the side edge.

Semiconductor module having semiconductor device mounted on device mounting substrate

To provide a thin solar cell module connector having improved reliability, enduring long use, and having high productivity. A diode chipis disposed in a diode module. The diode moduleis transfer-molded. The diode moduleis fitted in an openingin the module box

Solar cell module connector

An estrogen receptor gene and utilization of the estrogen receptor gene. The estrogen receptor gene contains a nucleotide sequence coding for any of the following amino acid sequences: (a) the amino acid sequence of SEQ ID NO:1, (b) the amino acid sequence of SEQ ID NO:4, (c) the amino acid sequence of SEQ ID NO:23, (d) an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence of SEQ ID NO:1, (e) an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence of SEQ ID NO:4, and (f) an amino acid sequence exhibiting 85% or more amino acid identity to the amino acid sequence of SEQ ID NO:23.

Estrogen receptor genes and utilization thereof

The present invention provides a transgenic non-human animal comprising a human-derived LXR&#x3b1; mutant gene to express a human LXR&#x3b1; mutant protein, wherein the human LXR&#x3b1; mutant is an isoform of LXR&#x3b1; involved in inhibition of normal cholesterol metabolism by normal LXR&#x3b1;; a nucleic acid construct which can be used to produce the transgenic non-human animal; and use thereof.

Nucleic acid construct, metabolic disordered non-human animal and use thereof

The present invention provides in general an artificial cell, an isolated mutant ER&#x3b1;, an isolated polynucleotide encoding the mutant ER&#x3b1;, a method for quantitatively analyzing an activity for transactivation of a reporter gene by a test ER&#x3b1;, a method for screening a mutant ligand dependent transcriptional factor, a method for evaluating an activity for transactivation of a reporter gene by a test ER&#x3b1;, a method for screening a compound useful for treating a disorder of a mutant ER&#x3b1;, a pharmaceutical agent useful for treating an estrogenic disorder of a mutant ER&#x3b1;, use of the mutant ER&#x3b1;, a method for diagnosing a genotype of a polynucleotide encoding a test ER&#x3b1;, a method for diagnosing a genotype of a polynucleotide encoding a test ER&#x3b1; and a method for diagnosing a phenotype of a test ER&#x3b1;.

Artificial cell comprising mutant estrogen receptor

A semiconductor device manufacturing method including forming a conductive layer and a silicon film on a semiconductor substrate including an active region, forming an emitter electrode containing a first impurity on the silicon film above the active region, partially etching the silicon film using the emitter electrode as a mask, forming an insulative film covering the semiconductor substrate and a side wall film covering a side surface of the emitter electrode, introducing a second impurity into the conductive layer and silicon film so that the second impurity reaches the active region to form an impurity region containing the second impurity in parts of the conductive layer and silicon film, and diffusing the first impurity contained in the emitter electrode into the silicon film to form in the silicon film a first region containing the first impurity and a second region free of the first impurity.

Manufacturing method for semiconductor device

A gene coding for any of the following estrogen receptors (a) to (c): (a) an estrogen receptor comprising the amino acid sequence represented by amino acid numbers 153 to 602 in the amino acid sequence of SEQ ID NO: 1, (b) an estrogen receptor comprising the amino acid sequence of SEQ ID NO: 1, and (c) an estrogen receptor comprising an amino acid sequence exhibiting 95% or more amino acid identity to the amino acid sequence represented by amino acid numbers 153 to 602 in the amino acid sequence of SEQ ID NO: 1; and the like.

Growing community of inventors

Osaka, Japan

Koichi Saito