Toyoda Gosei Co., Ltd.

Tridonic Optoelectronics Gmbh

Litec Gbr

Leuchstoffwerk Breitungen Gmbh

Sumita Optical Glass, Inc.

Kabushiki Kaisha Toshiba

Koichi Ota

Yoshinobu Suehiro

Yuji Takahashi

Atsuo Hirano

Akihito Ota

Toshiya Uemura

Walter Tews

Gundula Roth

Detlef Starick

Peter Pachler

Stefan Tasch

Wolfgang Kempfert

Satoshi Wada

Hideaki Kato

Naruhito Sawanobori

Yoshinori Yamamoto

Hiroki Watanabe

Kazuya Aida

Koichi Kaga

Mitsuhiro Inoue

Kunihiro Hadame

Masaaki Ohtsuka

Ryoichi Tohmon

Naohisa Nagasaka

Naoki Yoshimura

Tadashi Endo

Koichi Nitta

Shota Shimonishi

Akihiro Misawa

Hiroaki Oshio

Takemasa Yasukawa

Toshinori Takahashi

Nozomu Takahashi

Kuniyoshi Kondo

Kenji Shimomura

Hisatoshi Ota

Masaki Hashimura

Tomokazu Kitajima

Takao Sato

Mamoru Mitomo

Masakazu Komatsu

Junko Okano

A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.

Solid element device and method for manufacturing the same

A solid element device includes a solid element, an electric power receiving and supplying part for receiving electric power from and supplying the electric power to the solid element, and an inorganic sealing material for sealing the solid element. The inorganic sealing material includes a low melting glass selected from SiO&#x2014;NbO-based, BO&#x2014;F-based, PO&#x2014;F-based, PO&#x2014;ZnO-based, SiO&#x2014;BO&#x2014;LaO-based, and SiO&#x2014;BO-based low melting glasses.

A light emitting apparatus has a light emitting element with an emission wavelength in the range of 360 to 550 nm and a rare-earth element doped oxide nitride phosphor or cerium ion doped lanthanum silicon nitride phosphor. Part of light radiated from the light emitting element is wavelength-converted by the phosphor. The light emitting apparatus radiates white light generated by a mixture of the wavelength-converted light and the other part of light radiated from the light emitting element.

Light emitting apparatus and light emitting method

A method for manufacturing a solid element device, which comprises providing a glass-containing AlOsubstrate () having a GaN based LED element () placed thereon, setting a PO&#x2014;ZnO based low melting point glass in parallel with the substrate, and carrying out a press working at a temperature of 415&#xb0; C. or higher under a pressure of 60 kgf in a nitrogen atmosphere. Under these conditions, the low melting point glass has a viscosity of 10poise, and is adhered via an oxide formed on the surface of the glass-containing AlOsubstrate (). A solid element device manufactured by the above method can be manufactured through a glass sealing working at a low temperature and also has a highly reliable sealing structure.

An LED light comprising a light-emitting device provided to power supply means, encapsulating means for encapsulating the light-emitting device with a light-transmitting material, a reflective surface for reflecting the light emitted from the light-emitting device to a direction perpendicular to the center axis of the light-emitting device or at a large angle to the center axis, opposed to the light-emitting surface of the light-emitting device, a light-emitting diode having a side directing surface for directing sideways the light reflected from the reflective surface to a direction perpendicular to the center axis of the light-emitting device or at a large angle to the center axis, and a reflecting mirror disposed around the light-emitting diode.

Light-emitting diode, led light, and light apparatus

A light-emitting device with an emission wavelength range of from 360 nm to 550 nm and a fluorescent material made of Ca&#x2014;Al&#x2014;Si&#x2014;O&#x2014;N oxynitride activated with Euare used so that a part of light emitted from the light-emitting device is emitted while the wavelength of the part of light is converted by the fluorescent material.

Light-emitting unit having specific fluorescent material

The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The phosphor is made of alkaline earth metal silicate fluorescent material activated with europium.

Light emitting device

A novel configuration of a light-emitting apparatus that can emit white light, in which a primary light source composed of a group III nitride compound semiconductor is used in combination with a secondary light source including a fluorescent material which emits light of a green luminescent color when the fluorescent material is excited by light emitted from the primary light source. A tertiary light source for emitting red light may be further used in combination with the primary and secondary light sources.

Light-emitting apparatus

A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed in the laminate by a dicing saw, and an outer side surface of the groove may be provided as the reflection surface.

Group III nitride compound semiconductor light-emitting device

A purple LED is fixed onto lead frames in the cup of a frame using a mount, and the purple LED is sealed by filling a sealant of transparent resin into the cup. Red/green/blue phosphors that absorb a light emitted by the purple LED and emit lights having red, green, blue wavelengths different from the wavelength of this absorbed light are mixed into the sealant. A yellow phosphor that absorbs a light emitted by the purple LED and emits a light having a yellow wavelength different from the wavelength of this absorbed light is additionally mixed into the sealant in such a white light emitting device.

White light emitting device

A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element () for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin () provided to embed the light emitting element; and a fluorescent element () contained in the silicone resin to absorb the primary light and release visible light.

Light emitting device having a divalent-europium-activated alkaline earth metal orthosilicate phosphor

A method for dividing a semiconductor wafer into chips according to the present invention is a method for dividing a semiconductor wafer into a large number of semiconductor chips, the semiconductor wafer having a semiconductor layer formed on a substrate. A first method includes the step of forming a blast-resistant mask on a surface of the semiconductor wafer, the blast-resistant mask having a pattern for leaving a grid-like exposed portion as it is and the step of blasting a fine particular blast material to thereby form dividing grooves reaching a predetermined depth of the substrate in the grid-like exposed portion. A second method includes the step of forming first dividing grooves in a surface of the semiconductor wafer in which the semiconductor layer is formed, by dicing, etching or blasting, so that the first dividing grooves have a relatively narrow groove width, and the step of forming second dividing grooves in a surface of the semiconductor wafer in which the semiconductor layer is not formed by dicing, and in positions corresponding to the first dividing grooves, so that the second dividing grooves have a relatively wide groove width.

Method for dicing semiconductor wafer into chips

An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 &#x3bc;m, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 &#x3bc;m.

Group III nitride compound semiconductor device

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Aichi-ken, Japan

Koichi Ota