Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Koichi Oikawa

Noriyuki Isobe

Yuji Takebayashi

Kenji Kameda

Kenichi Suzaki

Atsushi Hirano

Takeshi Kasai

A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.

Method of manufacturing semiconductor device and recording medium

A film is efficiently formed by sufficiently supplying a source gas to substrates accommodated in a process chamber, and the uniformity of a film formed on the substrates is improved. A method of a semiconductor device manufacturing includes (a) supplying a source gas to an upper region of a process chamber through a first gas supply hole disposed at a front end of a first nozzle disposed in a lower region of the process chamber where the source gas is not pyrolyzed; (b) supplying the source gas to substrates disposed in the lower region and a middle region of the process chamber through a plurality of second gas supply holes of a second nozzle; and (c) supplying a reactive gas to substrates disposed in the lower region, the middle region and the upper region of the process chamber through a plurality of third gas supply holes of a third nozzle.

Method of manufacturing semiconductor device

Growing community of inventors

Toyama, Japan

Koichi Oikawa