Nec Electronics Corporation

Renesas Electronics Corporation

Nec Corporation

Koichi Ohto

Tatsuya Usami

Noboru Morita

Toshiyuki Takewaki

Yoichi Sasaki

Nobuyuki Yamanishi

Koji Arita

Ryohei Kitao

Sadayuki Ohnishi

Daisuke Oshida

Kazuhiko Endo

Takuji Onuma

Norio Okada

Hidemitsu Aoki

Hiroaki Tomimori

Hidenobu Miyamoto

Takayuki Matsui

Takamasa Tanikuni

Yoshihiro Hayashi

Jun Kawahara

Hironori Yamamoto

Tomoyuki Nakamura

Hideaki Tsuchiya

Takashi Tonegawa

Shinji Yokogawa

Yukio Miura

Chikako Ohto

The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si&#x2014;N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cmto 860 cm. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.

Semiconductor device and manufacturing method thereof

In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.

Semiconductor device having silicon-diffused metal wiring layer and its manufacturing method

A semiconductor device including: a substrate; an insulating film formed over the substrate; a copper interconnect, having a plurality of hillocks formed over the surface thereof, buried in the insulating film; a first insulating interlayer formed over the insulating film and the copper interconnect; a second insulating interlayer formed over the first insulating interlayer; and an electroconductive layer formed over the second insulating interlayer, wherein the top surface of at least one hillock highest of all hillocks is brought into contact with the lower surface of the second insulating interlayer is provided.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film.

Method of manufacturing semiconductor device

An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof. The barrier film (for instance, a second barrier film) disposed between the interconnection or the via plug and its overlying interlayer insulating film is made to have a layered structure made of a plurality of films containing silicon and carbon (preferably, silicon, carbon and nitrogen), with different carbon contents, and, in particular, a low-carbon-concentration filmwith a small carbon content is set to be a lower layer therein and a high-carbon-concentration filmwith a large carbon content is set to be an upper layer therein, whereby the effectual prevention against the Cu diffusion, a high etching selection ratio and good adhesiveness to the Cu interconnection can be certainly provided by the presence of the low-carbon-concentration film, while the overall dielectric constant can be well reduced by the presence of the high-carbon-concentration film

Method of manufacturing a semiconductor device

A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of the lower electrode to form a projection containing silicide by reacting the metal with the silicon in an island shape on the surface of the lower electrode. Then, a capacitor film is formed on the lower electrode and the projection, and an upper electrode is formed on the capacitor film.

Semiconductor device having projection on lower electrode and method for forming the same

In a method of manufacturing a semiconductor device where at least one insulating layer structure having a metal wiring constitution is formed to thereby construct a multi-layered wiring arrangement, a first SiOCH layer is produced. Then, a surface section of the first SiOCH layer is treated to change the surface section of the first SiOCH layer to a second SiOCH layer which features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer and an oxygen (O) density higher than that of the first SiOCH layer. Finally, a silicon dioxide (SiO) layer is formed on the second SiOCH layer.

[object Object]

The dielectric constants of SiC and SiCN that are currently the subjects of much investigation are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the interconnection size and the spacing of interconnections brought about by the reduction in device size, there have arisen strong demands that dielectric constants should be further reduced. Furthermore, because the etching selection ratio of SiOC to SiCN as well as that of SiOC to SiC are small, if SiCN or SiC is used as the etching stopper film, the surface of the metal interconnection layer may be oxidized at the time of photoresist removal, which gives rise to a problem of high contact resistance. The present invention relates to an organic film made of one of SiOCH, SiCHN and SiCH that is formed using, as a source, a polyorganosilane whose C/Si ratio is at least 5 or greater and molecular weight is 100 or greater, and a semiconductor device wherein such an organic insulating film is used, and more particularly to a semiconductor device having a trench structure.

Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof

A first gas including a silicon-containing compound is introduced into a vacuum chamber, to expose a semiconductor substrate placed in the chamber to the first gas atmosphere (silicon processing step). Then the pressure inside the vacuum chamber is reduced to a level lower than the pressure at the time of starting the silicon processing step (depressurizing step). Thereafter, a second gas including a nitrogen-containing compound is introduced into the vacuum chamber, and the semiconductor substrate is irradiated with the second gas plasma (nitrogen plasma step).

Semiconductor method having silicon-diffused metal wiring layer

Single damascene structure semiconductor device having silicon-diffused metal wiring layer

Propagation of a crack in a semiconductor device is to be suppressed, thus to protect an element forming region. An interface reinforcing film is provided so as to cover a sidewall of a concave portion that penetrates a SiCN film and a SiOC film formed on a silicon substrate. The interface reinforcing film is integrally and continuously formed with another SiOC film, and includes an air gap.

Semiconductor device

Growing community of inventors

Kanagawa, Japan

Koichi Ohto