Kabushiki Kaisha Toshiba

Toyoda Gosei Co., Ltd.

Koichi Nitta

Kuniaki Konno

Masayuki Ishikawa

Hideto Sugawara

Haruhiko Okazaki

Satoshi Komoto

Yukie Nishikawa

Genichi Hatakoshi

Tadashi Umeji

Chisato Furukawa

Masaki Okajima

Kazuhiko Itaya

Hiroaki Oshio

Kenji Shimomura

Yukio Watanabe

Takafumi Nakamura

Yoshihiro Kokubun

Katsufumi Kondo

Yasuo Idei

Nobuhiro Suzuki

Hirohisa Abe

Shinji Saito

Minoru Watanabe

Hidetoshi Fujimoto

Masaaki Onomura

Yasuhiko Akaike

Nozomu Takahashi

Yoshiki Endo

Tokuhiko Matsunaga

Peter James Parbrook

Chiharu Nozaki

Yasuhiko Tsuburai

Tomokazu Kitajima

Mariko Suzuki

Hiroaki Yoshida

Toshiya Uemura

Masahiro Yamamoto

Yuji Takahashi

John Rennie

Koichi Ota

Ryo Saeki

Masaru Nakamura

Tetsuo Sadamasa

Yasuharu Sugawara

Atsushi Kamata

Masanobu Iwamoto

Akihiro Fujiwara

Sumio Ishimatsu

Tadashi Komatsubara

Takeshi Komatsu

An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Image display device and light emission device

Semiconductor light-emitting device with wavelength change material

A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element () for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin () provided to embed the light emitting element; and a fluorescent element () contained in the silicone resin to absorb the primary light and release visible light.

Light emitting device

A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the &#x3c;011&#x3e; direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device

For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

Semiconductor light emitting element having three side surfaces inclined to connect the top and bottom surfaces of the transparent substrate

There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting device includes an active layer for emitting primary light having a first wavelength by current injection, and a light emitting layer excited by the primary light for emitting secondary light having a second wavelength different from said first wavelength, wherein the primary light and the secondary light are mixed to be outputted.

Semiconductor light emitting device and method for manufacturing same

Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of its incident angle, and light can be efficiently extracted.

Semiconductor light-emitting element

Semiconductor light emitting device having angled side surface

Efficiency of leading out light released from an active layer, i.e. the external quantum efficiency, can be improved remarkably by processing a light lead-out surface to have an embossment. A layer containing a p-type dopant like magnesium (Mg) is deposited near the surface of a p-type GaN layer to diffuse it there, and a p-side electrode is made on the p-type GaN layer after removing the deposited layer. This results in ensuring ohmic contact with the p-side electrode, preventing exfoliation of the electrode and improving the reliability.

Semiconductor light emitting device and its manufacturing method

Semiconductor light emitting device having a fluorescent material emitting light of a secondary wavelength

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Yokohama, Japan

Koichi Nitta