Tohoku University

Koichi Nishioka

Tetsuo Endoh

Shoji Ikeda

Hideo Sato

Hiroaki Honjo

Hideo Ohno

Sadahiko Miura

A magnetoresistance effect element includes a first reference layer, a first junction layer, a first divided recording layer, a second junction layer, a second divided recording layer, and a third junction layer. The first divided recording layer has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kt).

Magnetoresistance effect element, magnetic memory, and film formation method for said magnetoresistance effect element

Provided are a magnetic tunnel junction dement suppressing diffusion and penetration of constituent elements between a hard mask film, and a magnetic tunnel junction film and a protection layer, and a method for manufacturing the magnetic tunnel junction element. The magnetic tunnel junction element has a configuration in which a non-magnetic insertion layer () including Ta or the like is inserted beneath a hard mask layer ().

Magnetic tunnel junction device, method for manufacturing magnetic tunnel junction device, and magnetic memory

Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer () and a second magnetic layer () of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer () and the second magnetic layer (), a film thickness t(nm) of the first magnetic layer (), and a film thickness t(nm) of the second magnetic layer () satisfy relationships D&#x3c;tand D&#x2264;tor D&#x2264;tand D&#x3c;t.

Magnetoresistive element and magnetic memory

Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor &#x394;, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.

Growing community of inventors

Sendai, Japan

Koichi Nishioka