Nuflare Technology, Inc.

Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Shindengen Electric Manufacturing Company Limited

Honda Motor Co., Ltd.

Central Research Institute of Electric Power Industry

Kabushiki Kaisha Toyota Chuo Kenkyusho

Koichi Nishikawa

Hideki Ito

Hidekazu Tsuchida

Masahiko Ito

Isaho Kamata

Masami Naito

Hiroaki Fujibayashi

Ayumu Adachi

Hideki Hashimoto

Seiichi Yokoyama

Masaaki Shimizu

Kunihiko Suzuki

Ken-ichi Nonaka

Yusuke Fukuda

Hiroaki Iwakuro

Katsumi Suzuki

Yusuke Yamashita

Masaru Senoo

Satoru Machida

Tomohisa Kato

Jun Okawara

Fusao Hirose

Yasuhiro Hirabayashi

Hiroshi Hosokawa

Kazutoshi Kojima

Jun Kojima

Kenichi Nonaka

Yusuke Maeyama

Naohisa Ikeya

Yoshifumi Yasuda

Yoshimitsu Saito

Kensuke Iwanaga

Toshiro Tsumori

A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.

Film forming apparatus, susceptor, and film forming method

In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.

Film-forming manufacturing apparatus and method

A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Film-forming apparatus and film-forming method

At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heateris provided, and a space where an upper heateris provided are made in an inert gas atmosphere.

Film formation apparatus and film formation method

A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

A semiconductor device is provided with a silicon layer, an upper surface side aluminum layer containing silicon and an insulation film. The upper surface side aluminum layer contacts and is layered on a part of a surface of the silicon layer. The insulation film contacts and is layered on another part of the surface of the silicon layer. The insulation film is adjacent to and contacts the upper surface side aluminum layer. The insulation film includes an insulation film body and a plurality of first nodule segregated portions projecting from the insulation film body toward the upper surface side aluminum layer as seen along a vertical direction relative to the surface of the silicon layer. A corner is formed by a side surface of the insulation film body and a side surface of each of the first nodule segregated portions as seen along the vertical direction.

Semiconductor device

A silicon carbide single crystal includes nitrogen as a dopant and aluminum as a dopant. A nitrogen concentration is 2&#xd7;10cmor higher and a ratio of an aluminum concentration to the nitrogen concentration is within a range of 5% to 40%.

Silicon carbide single crystal and manufacturing method of the same

A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.

Method, tool, and apparatus for manufacturing a semiconductor device

A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Method for manufacturing ion implantation mask, and method for manufacturing silicon carbide semiconductor device

Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same

A method for manufacturing a junction semiconductor device, having a step for forming a first high-resistance layer, a step for forming a channel-doped layer, a step for forming a second high-resistance layer, a step for forming a low-resistance layer of a first conductive type that acts as a source region, a step for performing partial etching to a midway depth of the second high-resistance layer and the low-resistance layer, a step for forming a gate region below the portion etched in the etching step, and a step for forming a protective film on the surface of the region between the gate region and the source region. A gate region is formed using relatively low energy ion implantation in the surface that has been etched in advance to a height that is between the lower surface of the source area and the upper surface of the channel-doped layer.

Method for manufacturing junction semiconductor device

Growing community of inventors

Nagoya, Japan

Koichi Nishikawa