Kyocera Corporation

Kyocera Automotive and Industrial Solutions Gmbh

Koichi Nagasaki

Tsunehiko Nakamura

Shigenobu Nakamura

Fumiaki Nakao

Keiji Iwata

Kenji Kitazawa

Hiroshi Aida

Yasunori Kawanabe

Kazuhiro Kuchimachi

Saburo Nagano

Kyoji Uchiyama

Takeshi Kato

Susumu Ono

Takeshi Shintani

Matthias Neundorf

Hiroshi Fure

Manfred Sauer

Seiichi Karatsu

An image display apparatus includes a liquid crystal display panel including a display surface for displaying an image; an imaging device disposed face a back surface of the liquid crystal display panel, the back surface located opposite to the display surface, the imaging device being capable of imaging a front area of the liquid crystal display panel; and a backlight device which retains the imaging device in a location behind the back surface of the liquid crystal display panel, and applies light to the back surface of the liquid crystal display panel. The imaging device includes a sleeve including a cylindrical third sleeve which receives therein a lens, and an annular light shield member is mounted between the back surface and an end surface of the third sleeve and is in contact with each of the back surface and the end surface.

Image display apparatus

A wafer heating apparatus which is capable of quickly cooling by improving the cooling rate of the heater section is provided. The wafer heating apparatus comprises a plate-shaped member having two opposing principal surfaces with one of the principal surfaces serving as a mounting surface to mount a wafer thereon and the other principal surface having a band-shaped resistive heating member formed thereon, power feeder terminals connected to the resistive heating member for supplying electric power to the resistive heating member, a casing provided to cover the power feeder terminals on the other surface of the plate-shaped member and a nozzle of which tip faces the other surface of the plate-shaped member for cooling the plate-shaped member, wherein the position of the tip of the nozzle as projected onto the other surface of the plate-shaped member is located between the bands of the resistive heating member.

Wafer heating apparatus and semiconductor manufacturing apparatus

A multi-layer piezoelectric element of high durability wherein external electrodes do not peel off the surface of a stack even when operated continuously over a long period of time under a high electric field and a high pressure, a method for manufacturing the same and an injection apparatus using the same are provided. The multi-layer piezoelectric element comprises a stackconsisting of a plurality of piezoelectric layersand a plurality of metal layerswhich are stacked alternately one on another and external electrodes (covering member)that cover at least a part of the side faces of the stack, wherein at least one metal layeramong the plurality of metal layersis a porous metal layerwhich has more voids than the metal layersthat adjoin the metal layeron both sides thereof in the stacking direction, and a part of the external electrodesinfiltrates between two piezoelectric layerswhich adjoin the porous metal layerin the stacking direction.

Multi-layer piezoelectric element and injection apparatus using the same

In a ceramic heater having a plate-like body made of a ceramic, heating element in one main face of the plate like body, and an electric supply portion to be electrically connected with the heating element, it has been a problem that the temperature is uneven if bent portions are formed in heat generating patterns. The ceramic heater simultaneously satisfying the following: 0.15&lE;S&lE;0.85, 0.3&lE;P&lE;6.71&times;S &plus;1.52, and 0.3&lE;G&lE;6.71&times;(1&minus;S) &plus;1.55, in which the reference character S denotes the surface area of the heating element in optional 10 mm square region of the effective heat generation area having the heating element therein; the surface ratio S denotes S&equals;S /100 mm , the reference character P denotes the width of the heating element: and the reference character G denotes the gap between the heating element.

Wafer heating apparatus

An electrostatic chuck according to the present invention exhibits a greater attractive force by virtue of the Johnson-Rahbeck effect, while ensuring satisfactory insulation in a ceramic portion present below an electrostatic attraction electrode thereof in a temperature range of 250 to 450&deg; C. The electrostatic chuck is produced by superposing green sheets printed with a conductive paste and green sheets not printed with the conductive paste in a predetermined order with a binding liquid applied on the respective green sheets, heat- and press-bonding the superposed green sheets and firing the heat- and press-bonded green sheets. During the production, a conductive component of the electrostatic attraction electrode is diffused into the ceramic portion present between the electrode and an attractive surface of the chuck.

Electrostatic chuck and production method therefor

A wafer holding device is provided, which comprised a wafer holding stage of ceramics having a internal electrode and a top surface on which at least a wafer is to be mounted, a base block supporting said stage integrated thereto, and a braze material layer to join the stage and the base block therebetween which the layer is interposed, wherein the base block is formed a porous ceramics and a metal filled in pores of the ceramics, the porous ceramics has a thermal expansion coefficient within 3.times.10.sup.-6 /.degree. C. of the difference of the thermal expansion coefficient with respect to the ceramics of the stage, and the braze material layer comprises a aluminum-based braze material.

Wafer holding device

A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, an outer circumference and penetration holes. Each of the penetration holes opens in the flat surface, and has an inner wall. An aluminum nitride film covers the flat surface, the outer circumference, and the inner wall of each of the penetration holes.

Growing community of inventors

Kirishima, Japan

Koichi Nagasaki