Matsushita Electric Industrial Co., Ltd.

Koichi Nagao

Kenzo Hatada

Yoshiro Nakata

Kazuhiko Matsumura

Shinichi Oki

Hideyuki Kaneko

Yukiko Nakaoka

Hiroaki Fujimoto

Takashi Sato

Kunio Sano

Shigeoki Mori

A semiconductor device includes a first semiconductor chip provided with a first electrode on a first main surface and a second semiconductor chip provided with a second electrode on a second main surface. The first and the second semiconductor chips are integrated so that the first and second main surfaces are opposed to one another and the first and second electrodes are electrically connected. The second semiconductor chip is polished from the opposite side of the second main surface so that the second semiconductor chip has a thickness smaller than the thickness of the first semiconductor chip.

Semiconductor device and manufacturing method thereof

A semiconductor wafer of the present invention includes: a plurality of semiconductor chip areas each of which is to be a semiconductor chip; and a cut-off area for separating the plurality of semiconductor chip areas from one another so as to obtain the semiconductor chips, wherein: an integrated circuit and an electrode pad connected to the integrated circuit are provided in each of the semiconductor chip areas; and a probe pad connected to the electrode pad is provided in the cut-off area.

Semiconductor wafer, semiconductor device, and method for manufacturing the same

A semiconductor device includes a lead frame having a die pad and leads, a first semiconductor chip having first internal electrodes and first external electrodes and mounted on the die pad, a second semiconductor chip having second internal electrodes and second external electrodes and bonded to the first semiconductor chip with the surfaces facing each other, the first internal electrodes being connected to the respective first internal electrodes with bumps, first and second metal fine wires connecting between the leads and the respective first and second external electrodes, and sealing resin. Both semiconductor chips are shifted from each other with the edges being substantially in parallel, a part of the end portion of each semiconductor chip protrudes from the edge of the counterpart semiconductor chip and the external electrodes are located in the protruded regions. Regardless of the outside dimension of both semiconductor chips, it is possible to electrically connect the semiconductor chip to the lead frame effectively.

Semiconductor package having two chips internally connected together with bump electrodes and both chips externally connected to a lead frame with bond wires

In a semiconductor device functioning as a three-dimensional device composed of two semiconductor chips bonded to each other, the back surface of the upper semiconductor chip is polished, the entire side surfaces of the upper semiconductor chip are covered with a resin layer, or the center portion of the upper semiconductor chip is formed to be thicker than the peripheral portion thereof. This suppresses the occurrence of a package crack and improves the reliability of the semiconductor device.

Semiconductor device and method for fabricating the same

Bumps to be connected to inspection electrodes of semiconductor chips are formed on a surface of a flexible substrate. A plating layer is formed which is made of a harder material than the bumps formed on the flexible substrate and which has a concave portion or a convex portion whose diameter is equal to or smaller than half the diameter of the bumps, on a flat metallic plate. The plating layer of the metallic plate is pressed against top surfaces of the bumps, so that irregularities are formed in the top surfaces of the bumps.

Method of manufacturing probe card

A plated layer made of a metal which is hard to oxidize is formed on the surface of a check electrode of a semiconductor chip which is formed on a semiconductor wafer. A bump of a contactor is caused to come in contact with the check electrode on which the plated layer is formed in the direction perpendicular to the semiconductor chip. Then, a voltage is applied to the bump of the contactor to make a check such as burn-in on the semiconductor chip in a lump.

Semiconductor device checking method

A semiconductor wafer is affixed on a dicing sheet having an appropriate expansibility. Then, a dicing operation is performed on the semiconductor wafer without dividing the dicing sheet, thereby dividing a plurality of semiconductor chips from each other. After aligning a contactor against the semiconductor wafer, the semiconductor wafer is fixed to the contactor. In this case, protrusions provided on the contactor are inserted into the gap between semiconductor chips. The protrusions cause a shift movement toward the peripheral edge of the contactor in response to thermal expansion of the contactor, thereby expanding the gap between semiconductor chips. Then a burn-in is performed on all of the plural semiconductor chips of which gap is expanded.

Inspecting method for semiconductor devices

Lead connection in a structure is provided by leads disposed against electrodes of wiring board through resin, which resin is then stiffened by the application of light. Accordingly, an electrical and a mechanical connection of the leads and the electrodes is accomplished.

Lead connection structure

Lead connection in a structure is provided by leads disposed against electrodes of wiring board through resin, which resin is then stiffened by the application of light. Accordingly, an electrical and a mechanical connection of the leads and the electrondes is accomplished.

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Kyoto, Japan

Koichi Nagao