Asahi Glass Company, Limited

Nippon Telegraph and Telephone Corporation

Fuji Electric Co., Ltd.

Fujitsu Corporation

Caterpillar Sarl

The Furukawa Electric Co., Ltd.

Showa Denko K.k.

Ntt Electronics Corporation

Fuji Photo Film Company, Limited

Nissan Motor Company Limited

Mitsubishi Heavy Industries Limited

Agc Inc.

Fuji Medical Systems Co., Ltd.

Imsec Corporation

Koichi Murata

Hideyuki Nosaka

Hidekazu Tsuchida

Takashi Okazoe

Kimikazu Sano

Naoko Shirota

Kazuya Oharu

Munehiko Nagatani

Hiroyuki Fukuyama

Takeshi Tawara

Tomoyuki Fujita

Osamu Yokokoji

Shu-zhong Wang

Shogo Yamanaka

Masahiko Ishiguri

Makoto Nakamura

Eiji Watanabe

Daisuke Shirakawa

Atsushi Watakabe

Satoru Hommura

Seigo Kotera

Shinji Wada

Takuji Nomura

Eisuke Murotani

Yoko Takebe

Masatoshi Tobayashi

Mikio Yoneyama

Takatomo Enoki

Masashi Shibata

Shota Hoshaku

Kiyomitsu Onodera

Eisuke Tsuchiya

Kengo Kawahara

Masami Ikeda

Susumu Saito

Naoki Fujiwara

Hiroshi Yamazaki

Masahiro Suzuki

Masayuki Miyazaki

Yutaka Miyamoto

Hiroshi Koizumi

Taiki Hoshino

Koji Nakayama

Yoshiharu Ooi

Hiroyuki Uzawa

Hiromasa Sato

Tetsuji Shimohira

Fumihiko Abe

Makoto Abe

Naoyuki Watanabe

Takashi Saida

Isaho Kamata

Koki Watanabe

Eiji Endoh

Isamu Kaneko

Shin Kamei

Dongzhi Jin

Kengo Horikoshi

Koji Miyasaka

Hiroto Kawakami

Yusuke Suzuki

Yoshitomi Morizawa

Keigo Matsuura

Kazushige Yonenaga

Shuichi Chiba

Nobuhiro Kikuchi

Yoshihiko Okamoto

Hiroaki Katsurai

Daisuke Jomuta

Yoshiyuki Yonezawa

Takahiro Ohta

Toshihiro Itoh

Yutaka Makino

Makoto Uno

Tomoyoshi Kataoka

Shigeki Aisawa

Masaya Tanaka

Masafumi Nogawa

Hajime Mochizuki

Eiichiro Anraku

Naoto Ishibashi

Hiroaki Shimozono

Kensuke Tanaka

Hideo Sakuyama

Akira Miyasaka

Shinji Fujikake

Yozo Nakamoto

Aki Takigawa

Keisuke Shirani

Masahide Kimura

Junichi Tayanagi

Jyunichi Tayanagi

Toshimasa Kakiuchi

Tamotu Yoshizawa

Tatsuya Imai

Yasunobu Inabe

Shigeyuki Furuta

Michiaki Tamagawa

Systems, methods, and apparatuses can accurately determine proper payload transfer from a working implement of a working machine. Such systems, methods, and apparatuses can identify occurrence of a payload discharge event for the working implement; determine whether a position of the working implement at a time of the identification of the occurrence of the payload discharge event is in a preset working area or a preset discharge area; omit the payload discharge event from registration for a tally of discharge material payload amount under a first case where the position of the working implement is determined to be in the working area; and register the payload discharge event for the tally under a second case where the position of the work implement is determined to be in the discharge area. The tally of the discharge material payload amount may be increased by a load amount associated with the load discharge event.

System, method, and apparatus for accurately determining payload transfer

A vertical metal oxide semiconductor field effect transistor, including a starting substrate of a first conductivity type, a second first-conductivity-type epitaxial layer provided on a first surface of the starting substrate via a first first-conductivity-type epitaxial layer, a first semiconductor region of the first conductivity type provided as a portion of the second first-conductivity-type epitaxial layer, a second-conductivity-type epitaxial layer forming a pn junction interface with the second first-conductivity-type epitaxial layer and supplying a minority carrier to the second first-conductivity-type epitaxial layer, a plurality of second semiconductor regions of the first conductivity type selectively provided in the second-conductivity-type epitaxial layer, a plurality of trenches penetrating through the second semiconductor regions and the second-conductivity-type epitaxial layer, and a plurality of gate electrodes provided in the trenches via gate insulating films. A lifetime of the minority carrier of the first semiconductor region is shorter than that of the rest of the second first-conductivity-type epitaxial layer.

Vertical MOSFET having trench gate structure containing silicon carbide

A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing method

A fluorinated ether compound and a composition capable of forming a light resistant surface layer and an article are provided. The fluorinated ether compound of the present invention has a poly(oxyfluoroalkylene) chain, a reactive silyl group and a group (A) represented by &#x2014;NR&#x2014;C(O)&#x2014; (wherein R is a hydrogen atom or an alkyl group), wherein the carbonyl carbon in the group (A) is bonded to a carbon atom, and the poly(oxyfluoroalkyiene) chain is located at the nitrogen end of the group (A).

Fluorine-containing ether compound, composition and article

A SiC epitaxial wafer according to an embodiment includes: a SiC substrate; and a SiC epitaxial layer formed on a first surface of the SiC substrate. The in-plane uniformity of a density of Zcenters of the SiC epitaxial layer is 5% or less.

SiC epitaxial wafer and method for producing SiC epitaxial wafer

A semiconductor device including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided at a front surface of the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a first semiconductor region of the first conductivity type, selectively provided in the second semiconductor layer and having an impurity concentration higher than that of the semiconductor substrate, a trench penetrating the first semiconductor region and the second semiconductor layer, to reach the first semiconductor layer, and a gate electrode provided in the trench, via a gate insulating film. The trench has a sidewall that includes a terrace portion, surface roughness of the terrace portion being at most 0.1 nm.

Semiconductor device and method of manufacturing semiconductor device

During epitaxial growth of an n-type drift layer having a uniform nitrogen concentration, vanadium is doped in addition to the nitrogen, whereby an n-type lifetime reduced layer is selectively formed in the n-type drift layer. The n-type lifetime reduced layer is disposed at a depth that is more than 5 &#x3bc;m from a pn junction surface between a p-type anode layer and the n-type drift layer in a direction toward a cathode side, and the n-type lifetime reduced layer is disposed separated from the pn junction surface. Further, the n-type lifetime reduced layer is disposed in a range from the pn junction surface to a depth that is &#x2153; times a thickness of the n-type drift layer. A vanadium concentration of the n-type lifetime reduced layer is 1/100 to &#x2155; of a nitrogen concentration of the n-type lifetime reduced layer.

Silicon carbide semiconductor device and a method of manufacturing the silicon carbide semiconductor device

On a front surface of an n-type starting substrate containing silicon carbide, a pin diode is configured having silicon carbide layers constituting an n-type buffer layer, an n-type drift layer, and a p-type anode layer sequentially formed by epitaxial growth. The n-type buffer layer is formed by so-called co-doping of nitrogen and vanadium, which forms a recombination center, together with an n-type impurity. The n-type buffer layer includes a first part disposed at a side of a second interface of the buffer layer with the substrate and a second part disposed at side of a first interface of the buffer layer with the drift layer. The vanadium concentration in the second part is lower than that in the first part. The vanadium concentration in the second part is at most one tenth of the maximum value Vmax of the vanadium concentration in the n-type buffer layer.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

The SiC-IGBT includes a p-type collector layer, an n-type voltage-blocking-layer provided on the collector layer, p-type base regions provided on the n-type voltage-blocking-layer, n-type emitter regions provided in an upper portion of the p-type base region, a gate insulating film provided in an upper portion of the voltage-blocking-layer, and a gate electrode provided on the gate insulating film. The p-type buffer layer has thickness of five micrometers or more and 20 micrometers or less and is doped with Al at impurity concentration of 5&#xd7;10cmor more and 5&#xd7;10cmor less and doped with B at impurity concentration of 2&#xd7;10cmor more and less than 5&#xd7;10cm.

Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same

An automatic swing device for a work machine is capable of performing a sieve operation in the posture where a work device is always at a posture suitable for sieve operation. An automatic swing device includes a posture sensor that detects a posture of a work device, and a controller that outputs signals to operate at least a stick cylinder and a bucket cylinder of the work device. The controller has an automatic swing mode in which the work device is automatically swung while the posture detected by the posture sensor is maintained to be in the range of a predetermined posture.

Automatic vibration device of work machine

Provided is a work machine which is capable of accurately preventing a work device from interfering with a load receiving member without separately using a dedicated device. A work machine includes a controller which at least controls rotating of an upper rotating body and vertical movement of a boom in accordance with operation by an operator. The controller controls either a boom-up operation and a rotating operation of the upper rotating body such that a work device is prevented from interfering with a load receiving member in operation of an operator at subsequent lifting and rotating, operation based on part of a locus at a distal end side of the work device at least for one lifting and rotating operation.

Working machine

An optical modulator driver circuit () includes an amplifier (, Q, Q, R-R), and a current amount adjustment circuit () capable of adjusting a current amount of the amplifier () in accordance with a desired operation mode. The current amount adjustment circuit () includes at least two current sources (IS) that are individually ON/OFF-controllable in accordance with a binary control signal representing the desired operation mode.

Optical modulator driver circuit and optical transmitter

When the position of a target moving in a monitoring region is intermittently detected, the position of the target is predicted in a higher precision. The prediction precision of the position of the target can be improved by calculating an existence probability distribution of the target and by accumulating the data of the intermittent detection by use of the Bayes' theorem.

Target monitoring system and target monitoring method

A rotor structure for a rotary electric machine in which an inner surface of a hollow rotor core and an outer surface of a shaft inserted into a hole of the rotor core are fitted together by mutual engagement between a projection and a recess to compose a rotor, the rotor structure including: a first retainer brought into contact with one end of the rotor core; and a second retainer brought into contact with a surface of the first retainer opposite to a surface in contact with the rotor core so as to fix the first retainer and the rotor core to the shaft, wherein a coefficient of static friction of a first sliding surface between the first retainer and the second retainer is smaller than any other sliding surface provided in the rotor.

Rotor structure for rotary electric machine

The present invention relates to a method for producing a carbonate compound and methacrylic acid or an ester thereof, containing a step (a1) of obtaining hexachloroacetone and hydrogen chloride from acetone and chlorine molecule, a step (a2) of obtaining a dialkyl carbonate and chloroform from hexachloroacetone and an alkyl alcohol, a step (b1) of obtaining 1,1,1-trichloro-2-methyl-2-propanol from chloroform and acetone, a step (b2+b3 or b4) of obtaining methacrylic acid or an ester thereof and hydrogen chloride from 1,1,1-trichloro-2-methyl-2-propanol and water or an alcohol, and a step (c1 or c2) of obtaining chlorine molecule by reacting hydrogen chloride with oxygen molecule.

Production method for carbonate compound and methacrylate or ester thereof

Growing community of inventors

Tokyo, Japan

Koichi Murata