Sony Corporation

Fuji Xerox Co., Ltd.

Fujifilm Business Innovation Corp.

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Sony Electronics Inc

Sony Corpotation

Sony Corportion

Koichi Matsumoto

Hiroaki Tanaka

Masato Ono

Masayuki Seko

Shigeru Fukuda

Daisuke Tanemura

Masato Furukawa

Kenichi Kawase

Isamu Konishiike

Satoya Sugiura

Yosuke Kubo

Takakazu Hirose

Masayuki Iwama

Iori Nishimura

Shogo Hayashi

Shunsuke Kurasawa

Tomoko Suzuki

Tomotake Inagaki

Kazuyuki Tomida

Kenta Yamakoshi

Hidetoshi Oishi

Minoru Rokutan

Kenji Omori

Satoshi Mizoguchi

Futoshi Takei

Masahiro Sato

Shigemi Ohtsu

Yusuke Kitagawa

Junji Okada

Daisuke Tano

Ryohei Yoshikawa

Takeshi Kawai

Shogo Tomari

Takashi Fujinaga

Katsuhiko Fukasaku

Koji Miyake

Kotaro Satori

Kazuya Yamanoi

Toshio Masubuchi

Fumio Daishi

Atsuhiro Abe

Shoichi Morita

Toshihiko Mitsuhashi

Tomoo Matsushima

Ryuichi Yamamoto

Hidetoshi Nishiyama

Chisato Okina

Keisuke Tanabe

Hiroyuki Okawa

Akito Shimizu

A semiconductor device according to an aspect of the present technology includes a low-concentration N-type region, a first high-concentration N-type region and a second high-concentration N-type region that are stacked with the low-concentration N-type region interposed therein, a gate electrode that surrounds the low-concentration N-type region as viewed from a stacking direction, which is a direction in which the low-concentration N-type region, the first high-concentration N-type region, and the second high-concentration N-type region are stacked, a first insulating film placed between the gate electrode and the low-concentration N-type region, and a second insulating film placed between the gate electrode and the first high-concentration N-type region. The first high-concentration N-type region is connected to one of a source electrode and a drain electrode. The second high-concentration N-type region is connected to the other of the source electrode and the drain electrode.

Semiconductor device and solid-state imaging sensor

A transfer device includes an intermediate transfer belt having a surface to which a toner image may be transferred and solid lubricant particles are attached, a primary transfer member performing primary transfer of a toner image to the surface of the intermediate transfer belt, a secondary transfer member performing secondary transfer of the toner image to a surface of a recording medium, and a detection device detecting a density of the toner image and has a light irradiation unit irradiating the surface of the intermediate transfer belt and a light receiving unit receiving reflected light, in which a relationship between a volume-average particle size A (nm) of the solid lubricant particles attached to the surface of the intermediate transfer belt and a wavelength B (nm) of the light radiated from the light irradiation unit satisfies the following Expression:Expression 1:8.6+300.

Transfer device and image forming apparatus

A semiconductor device and method of making same. The semiconductor device includes: a first conductivity type transistor and a second conductivity type transistor, wherein each of the first conductivity type transistor and the second conductivity type includes a gate insulating film formed on a base, a metal gate electrode formed on the gate insulating film, and side wall spacers formed at side walls of the metal gate electrode, wherein the gate insulating film is made of a high dielectric constant material, and wherein offset spacers are formed between the side walls of the metal gate electrode and the inner walls of the side wall spacers in any one of the first conductivity type transistor and the second conductivity type transistor, or offset spacers having different thicknesses are formed in the first conductivity type transistor and the second conductivity type transistor.

Semiconductor device with fin transistors and manufacturing method of such semiconductor device

An endless belt includes a layer containing a resin and electrically conductive particles. In the endless belt, a discharge starting voltage at which discharge starts when a voltage is applied to the layer and increased is 0.9 kV or more.

Endless belt, transfer device, and image forming apparatus

An intermediate transfer belt has metal oxide particles as a solid lubricant on a surface of the intermediate transfer belt, in which an average spacing between the metal oxide particles on the surface is 1,000 nm or less, and an average height of the metal oxide particles from the surface is 15 nm or more and 320 nm or less.

Intermediate transfer belt, transfer device, and image forming apparatus

An endless belt contains: a resin; electrically conductive carbon particles; and a surfactant. When polyester resin particles having a volume average particle diameter of 4.7 μm are caused to adhere to an outer circumferential surface of the endless belt and then air is blown onto the outer circumferential surface from an upper side of the outer circumferential surface while the blowing pressure of the air is increased, all the polyester resin particles adhering to the outer circumferential surface are separated from the outer circumferential surface before or when the blowing pressure reaches 6 kPa.

Transfer device, image forming apparatus, and endless belt

An endless belt includes a resin and conductive particles, in which a content of the conductive particles with respect to the endless belt is 5% by volume or more and 20% by volume or less in terms of a volume ratio, a Young's modulus of the endless belt is 3,000 MPa or more, and the number of times of bending endurance of the endless belt measured by an MIT test specified in JIS P8115:2001 is 10,000 or more.

An inorganic compound particle supply member includes inorganic compound particles, and the Young's modulus of the inorganic compound particle supply member is lower than the Young's modulus of a supply object to be supplied with the inorganic compound particles.

Inorganic compound particle supply member, transfer device, and image forming apparatus

A complementary transistor is constituted of a first transistor TRand a second transistor TR, active regionsof the respective transistors are formed by layering first A layersand the first B layersrespectively, surface regionsprovided in a base correspond to first A layersrespectively, first B layerseach have a conductivity type different from that of the first A layers, and extension layersof the first B layer are provided on insulation regionsrespectively.

Complementary transistor and semiconductor device

An endless belt includes a resin, and particles having an average primary particle diameter of 8 nm or more and 20 nm or less. In a volume frequency distribution of the particles determined by small-angle X-ray scattering measurement, the ratio (area B/area A) of graph area B of a particle diameter region of over 35 nm to graph area A of a particle diameter region of 35 nm or less is 0.3 or less.

Semiconductor device with fin-type field effect transistor

Disclosed herein is a composite transistor which includes a first transistor TRincluding a control electrode, a first active region, a first A extending part, and a first B extending part, and a second transistor TRincluding a control electrode, a second active region, a second A extending part, and a second B extending part. The first active region, the second active region, and the control electrode overlap one another. Both the first A extending part and the first B extending part extend from the first active region and both the second A extending part and the second B extending part extend from the second active region. The first electrode is connected to the first A extending part, the second electrode is connected to the second A extending part, and the third electrode is connected to the first B extending part and the second B extending part.

Composite transistor with electrodes extending to active regions

An endless belt includes: a resin; and electrically conductive particles, wherein an integrated discharge amount is 350 &#x3bc;C or less. The integrated discharge amount is determined by disposing an electrode at a position spaced 60 &#x3bc;m apart from the outer circumferential surface of the belt, applying a voltage to the electrode, and measuring the amount of discharge for a period of 1 second after the voltage reaches 1300 V.

A tunnel field-effect transistor has a stacked structure including a second active region, a first active region, and a control electrode. The first active region includes a first-A active region and a first-B active region between the first-A active region and a first active region extension portion. A second active region exists below the first-A active region, and the second active region does not exist below the first-B active region. Where an orthographic projection image of the second active region and an orthographic projection image of the first active region overlap with each other is defined as L, and a length in a Y direction of the first active region is defined as L, when an axial direction of the first active region is defined as an X direction, and a stacked direction of the stacked structure is defined as a Z direction, L&#x3c;Lis satisfied.

Tunnel field-effect transistor having a stacked structure including a first active region and a second active region

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Kanagawa, Japan

Koichi Matsumoto