Canon Kabushiki Kaisha

Fujitsu Corporation

Koichi Matsuda

Takaharu Kondo

Masafumi Sano

Jinsho Matsuyama

Masahiro Kanai

Tatsuyuki Aoike

Makoto Higashikawa

Soichiro Kawakami

Tsutomu Murakami

Keishi Saitoh

Keishi Saito

Toshimitsu Kariya

Naoto Okada

Yukito Aota

Toshihiro Yamashita

Akira Sakai

Hiroshi Yamamoto

Ryuji Okamura

Atsushi Shiozaki

Yusuke Miyamoto

Yuzo Koda

Hirokazu Otoshi

Hiroshi Shimoda

Tetsuro Nakamura

Yasuyoshi Takai

Mitsuo Saeki

Shotaro Okabe

Hidetoshi Tsuzuki

Tadashi Hori

Hisami Tanaka

Yuichi Sonoda

Mitsuyuki Niwa

Tomonori Nishimoto

Nozomu Izumi

Hiroshi Sugai

Yutaka Nishio

Akira Takeuchi

Kumiko Kaneko

A DC-DC converter includes a switching element to generate a pulse waveform by repeatedly admitting and cutting off the input voltage, a fluctuation component restraining circuit to restrain a fluctuation component generated in superposition on the pulse waveform and having a shorter cycle than a cycle of the pulse waveform, and a control circuit to operate the fluctuation component restraining circuit when the input voltage is equal to or larger than a reference voltage.

DC-DC converter, method for controlling DC-DC converter, and electronic device

A method for producing an organic light-emitting device is provided for an organic light-emitting device having a substrate provided with external connection terminals, organic light-emitting elements provided on the substrate, and a protective film that covers the organic light-emitting elements. The method includes, sequentially, providing a protective film removal layer on the external connection terminals, forming the protective film on the substrate, dividing the substrate on which the protective film has been formed, and cleaning the substrate with water, an aqueous solution, or a solvent. The protective film removal layer and the protective film are removed from the external connection terminals as a result of cleaning the substrate.

Method for producing organic light-emitting device

The present invention provides a method of producing an organic light emitting device capable of repairing a short-circuit between electrodes. The method includes: forming an organic light emitting device including a first electrode, an organic light emitting layer, and a second electrode successively on a substrate, and forming a first sealing layer on the second electrode; removing a short-circuited site of the organic light emitting device by irradiating at least the first sealing layer and the second electrode with a laser in the short-circuited site of the organic light emitting device; and forming a second sealing layer in the short-circuited site which has been removed.

Method of producing organic light emitting device

An organic EL device includes a substrate; a layered structure including a first electrode, an organic layer, and a second electrode disposed on the substrate in this order; and laminated protective layers surrounding at least the layered structure. The protective layers are composed of silicon, nitrogen, hydrogen, and fluorine. The fluorine content in the outermost protective layer is in the range of 0.01 to 1.0 atomic percent.

Organic electroluminescent device with SiN layer containing hydrogen and fluorine

A stacked photovoltaic element comprising a plurality of unit photovoltaic elements each composed of a pn- or pin-junction, connected to each other in series, wherein a zinc oxide layer is provided at least one position between the unit photovoltaic elements, and the zinc oxide layer has resitivity varying in the thickness direction.

Stacked photovoltaic element and method for producing the same

An organic light emitting apparatus obtained by dividing a plurality of organic light emitting apparatuses that are integrally formed, including a substrate; an organic light emitting device which is placed on the substrate and has a first electrode, an organic compound layer and a second electrode provided on the substrate in this order; and an inorganic moisture barrier layer formed on the organic light emitting device to cover the organic light emitting device. The inorganic moisture barrier layer has, around the organic light emitting device, a division end formed by dividing the inorganic moisture barrier layer, and the division end of the inorganic moisture barrier layer has a thickness smaller than the inorganic moisture barrier layer on the organic light emitting device.

Organic light emitting apparatus

Organic electroluminescent device

A method for forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD includes forming a deposited film containing microcrystalline silicon on a moving substrate by plasma-enhanced CVD under conditions such that when a deposited film having a thickness of 300 nm or more is formed on a substrate while the substrate is in a stationary state, an area of the microcrystalline silicon region in which an intensity of Raman scattering attributed to a crystalline substance in the deposited film is equal to or higher than three times an intensity of Raman scattering attributed to an amorphous is 50% or more of the total area based on the area of the microcrystalline silicon region and the area of a region composed of the amorphous.

Method for forming deposited film and photovoltaic element

There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm&#xb1;5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm&#xb1;5 mm.

Silicon-based thin film forming apparatus, silicon-based thin film forming method and semiconductor element

A silicon based film is provided which comprises a crystal phase formed on a substrate with a surface shape represented by a function f, wherein the silicon-based film is formed on a substrate with a surface shape having a standard deviation of an inclination arctan (df/dx) from 15&deg; to 55&deg; within the range of a sampling length dx from 20 nm to 100 nm. Raman scattering strength resulting from an amorphous component in the silicon-based film is not more than a Raman scattering strength resulting from a crystalline component. A difference between a spacing in a direction parallel to a principal surface of the substrate and a spacing of a single crystal silicon is within the range of 0.2% to 1.0% with regard to the spacing of the single crystal silicon.

Silicon-based film and photovoltaic element

A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

Method of forming crystalline silicon film by CVD

In a high frequency plasma CVD using a source gas comprising a silicon halide and hydrogen, the value of Q defined by Q&equals;P &times;P /S/d is controlled so as to be 50 or more, wherein P (W) is a supplied power, S (cm ) is the area of a high frequency introducing electrode, d (cm) is a distance between the high frequency introducing electrode and a substrate, and P (mTorr) is a pressure. Thereby, a method of forming a silicon thin film, a silicon thin film and a photovoltaic element excellent in photoelectric characteristics are provided which attain a film forming rate of an industrially practical level.

Method of forming silicon-based thin film

A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, generating plasma in the space of the interior of the vacuum vessel, and forming a silicon-based film on a substrate provided in the interior of the vacuum vessel.

Silicon-based film, formation method therefor and photovoltaic element

For efficiently forming a semiconductor element with excellent adhesion and environment resistance, a semiconductor element forming method is configured to have a step of forming a plurality of pin junctions of a silicon-based material on a substrate by a high-frequency plasma CVD process under a pressure of not more than atmospheric pressure, and the method further has a step of forming a p-layer, an i-layer, and a portion of an n-layer of a first pin junction of the pin junctions or forming an n-layer, an i-layer, and a portion of a p-layer of a first pin junction of the pin junctions, and thereafter exposing the p-layer or the n-layer exposed in the surface, to an oxygen-containing atmosphere; a step of forming on the p-layer or the n-layer as exposed to the oxygen-containing atmosphere a layer of the same conductivity type as that of the p-layer or the n-layer; and a step of forming an n-layer or a p-layer of a second pin junction adjacent to the first pin junction to form a pn interface.

Methods of forming semiconductor element, and semiconductor elements

A photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.

Growing community of inventors

Kawasaki, Japan

Koichi Matsuda