Seiko Epson Corporation

Koichi Kobayashi

Takashi Miyata

Junichi Okamoto

Wataru Iwanami

Taiyo Kanai

Hiroaki Tamura

Takashi Hagino

Hideki Horiuchi

A light emitting apparatus according to an aspect of the present disclosure includes a substrate, a first light emitting section, a second light emitting section, a first electrode, a second electrode, a first protective layer, and a second protective layer. The area of the first electrode is greater than the area of the second electrode, the first protective layer has a first through hole, and the second protective layer has a second through hole. The first through hole has a first hole and a second hole, and the second through hole has a third hole and a fourth hole. A first opening area is greater than a second opening area, and a third opening area is greater than a fourth opening area of an opening of the fourth hole that is the opening closest to the substrate, the outer edge of the second opening overlaps with the first electrode, and the outer edge of the fourth opening overlaps with the second electrode. The second opening area is greater than the fourth opening area.

Light emitting apparatus, method for manufacturing light emitting apparatus, and projector

A light emitting device includes a substrate, a laminated structure which is provided to the substrate, and includes a light emitting layer, a first electrode which has contact with the laminated structure at an opposite side of the laminated structure to the substrate, and is configured to inject an electrical current into the light emitting layer, and a wiring layer which is electrically coupled to the first electrode, and has a light shielding property with respect to light generated in the light emitting layer, wherein the wiring layer is provided with a first opening part which the light emitted from the laminated structure passes through, and the first opening part is located inside an outer edge of the first electrode in a plan view.

Light emitting device, projector, and display

A semiconductor laser including: a first mirror layer; a second mirror layer; an active layer, a current confinement layer, a first region, and a second region, in which the first mirror layer, the second mirror layer, the active layer, the current confinement layer, the first region, and the second region constitute a laminated body, the first region and the second region constitute an oxidized region of the laminated body, in a plan view, the laminated body includes a first part, a second part, and a third part disposed between the first part and the second part and resonating light generated in the active layer, and in a plan view, at least at a part of the third part, W&#x3e;Wand W&#x3e;W, Wis a width of the oxidized region of the first part, Wis a width of the oxidized region of the second part, and Wis a width of the oxidized region of the third part.

Semiconductor laser and atomic oscillator

There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

A ferroelectric memory element has a memory cell array including memory cells arranged in a matrix configuration, each of the memory cells having a lower electrode, an upper electrode arranged in a direction intersecting the lower electrode, and a ferroelectric layer disposed at least in an intersecting area between the upper electrode and the lower electrode, wherein a hydrogen barrier film and a hydrogen barrier film are arranged at least below the memory cell array, and a bottom hydrogen barrier film is arranged below the memory cell array.

Growing community of inventors

Fujimi, Japan

Koichi Kobayashi