Tokyo Electron Limited

Other

Tokyo Tanabe Company, Ltd.

Koichi Kazama

Nobuyuki Okayama

Daisuke Hayashi

Jun Ozawa

Naoki Takayama

Hidehito Saegusa

Nobuyuki Yasuda

Masahiro Ogasawara

Mitsuaki Komino

Tetsuji Sato

Hidehito Saigusa

Yoichi Ueda

Shinji Tsuchiya

Shuichiro Uda

Satoshi Yamada

Susumu Nogami

Shinji Fuchigami

Atsushi Fukuzaki

Shingo Kitamura

Kazuyoshi Haino

An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

Annular member, plasma processing apparatus and plasma etching method

A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a second gas supply path provided in a region surrounding the region where the first gas supply path is provided. The first gas supply path has a first gas diffusion space connected to a first gas line of the gas supply unit, second gas lines, a second gas diffusion space, third gas lines and a third gas diffusion space which are connected in that order. The second gas supply path has a fourth gas diffusion space connected to a fourth gas line of the gas supply unit, fifth gas lines, a fifth gas diffusion space, sixth gas lines, and a sixth gas diffusion space which are connected in that order.

Shower head, plasma processing apparatus and plasma processing method

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

Processing system

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulating member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly (ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow protection member for protecting the inner wall of a plasma processing chamber is integrally formed of glass-like carbon materials with a volume resistivity of 1&times;10 &OHgr;&middot;cm or less and a thermal conductivity of 5 W/m&middot;K or more. The protection member preferably has a thickness of 4 mm or more and the average surface roughness (Ra) of the inside of the hollow structure is preferably 2.0 &mgr;m or less. The plasma processing apparatus is configured so that the inner wall protection member having the above characteristics is arranged along the inner wall of the chamber of the plasma processing apparatus, wherein the inner wall of the chamber and the protection member are electrically connected and the chamber is grounded.

Protective member for inner surface of chamber and plasma processing apparatus

A processing system has an upper electrode with gas discharge holes of a shape corresponding to the external we of insulating members. The insulating members are formed of a poly(ether etherketone) resin, a polyimide resin, a poly(ether imide) resin or the like. Each insulating member has a step at its outer surface and an internal longitudinal through hole tapered to expand toward the processing chamber. The insulating members are pressed in the gas discharge holes to bring the steps into contact with shoulders formed in the sidewalls of the gas discharge holes. A part of each insulting member, as fitted in the gas discharge hole, projects from a surface of the upper electrode that faces a susceptor.

Indoline compound and 5-HT.sub.3 receptor antagonist containing the same

A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.

Growing community of inventors

Miyagi, Japan

Koichi Kazama