Kabushiki Kaisha Tokai Rika Denki Seisakusho

Koichi Jinkai

Hitoshi Iwata

Yasuo Imaeda

Kenichi Kinoshita

A bipolar transistor of the multi-emitter type which is provided with a large number of emitter diffusion layers formed in the two-dimensionally arranged state on a base diffusion layer of a substrate, a large number of emitter electrode films formed respectively correspondingly on the emitter diffusion layers, a base electrode film formed on the base diffusion layer, and a collector electrode film formed on the substrate, and the transistor is further provided with a wiring film commonly connected to the large number of emitter electrode films except at least one of the emitter electrode films.

Load current detecting device including a multi-emitter bipolar

Bipolar transistor

A bipolar transistor of a multi-emitter construction comprises a base diffusion layer formed in a substrate, a number of emitter diffusion layers formed in the base diffusion layer and arranged in a two-dimensional pattern, a base electrode film formed on the base diffusion layer, the base electrode film having a branch connection portion of a mesh-like shape surrounding each group consisting of at least one of the emitter diffusion layers, the base electrode film also having a main connection portion connected to said branch connection portion, and emitter electrode films formed respectively on said emitter electrode layers.

Growing community of inventors

Aichi, Japan

Koichi Jinkai