Hitachi, Ltd.

Other

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Koichi Imato

Yasuko Yoshida

Shuji Ikeda

Takashi Hashimoto

Toshiaki Yamanaka

Kousuke Okuyama

Kazuhiro Komori

Akio Nishida

Keiichi Yoshizumi

Kazushi Fukuda

Soichiro Hashiba

Fumiyuki Kanai

Kazuo Yoshizaki

Kazushi Tomita

Tsuyoshi Tabata

Kohji Yamasaki

Chiemi Hashimoto

Motoko Kawashima

Junichi Takano

Noriyuki Yabuoshi

Mitsugu Oshima

Sousuke Tsuji

Hideo Miwa

Mitsuhiro Higuchi

A gate electrode of each MISFET is formed on a substrate in an active region whose periphery is defined by an element isolation trench, and crosses the active region so as to extend from one end thereof to the other end thereof. The gate electrode has a gate length in a boundary region defined between the active region and the element isolation trench which is greater than a gate length in a central portion of the active region. The gate electrode is configured in an H-type flat pattern. Further, the gate electrode covers the whole of one side extending along a gate-length direction, of the boundary region defined between the active region L and the element isolation trench, and parts of two sides thereof extending along a gate-width direction. The MISFETs are formed in electrically separated wells and are connected in series to constitute part of a reference voltage generating circuit.

Semiconductor integrated circuit device including MISFETs each with a gate electrode extended over a boundary region between an active region and an element isolation trench

Semiconductor integrated circuit device

A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Semiconductor integrated circuit device having capacitance element and

Semiconductor integrated circuit device and process of manufacturing the

Growing community of inventors

Higashimurayama, Japan

Koichi Imato