Omron Corporation

Omron Tateisi Electronics Co.

Koichi Imanaka

Hiroshi Sekii

Yoshinori Ito

Shiro Ogata

Hiroshi Goto

Hiroshi Imamoto

Tetsuo Maeda

Kourou Kitajima

Fumihiko Sato

An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type on an upper portion of a luminescent layer. In one portion of the above-described layer, an area for a current path consisting of the second conductivity type is formed extending from the second semiconductor layer to the first semiconductor layer. An ohmic contact electrode is then created covering substantially the entire upper surface of the second semiconductor layer with the exception of the area defined for the current path.

Semiconductor element and its method of manufacturing

A multi-focus optical sensing device for use in bar code scanners, photoelectric sensors and the like is disclosed. To extend the range of detection along the optical axis, without increasing the detection time, the focal point of the light beam is caused to move along the optical axis. A control and modulation circuit varies a current I.sub.f which drives an optical semiconductor serving as a light source. This changes the focal distance of a refraction lattice and so causes the focal position of the light beam emitted by light source to scan along the optical axis. This scan is repeated each time a polygonal mirror scans the light beam over the narrowest width 1/n (where n is an integer) of the bar code lines. A processing unit samples and processes the signal from a photodetector unit while the light beam is being scanned along the optical axis.

Multi-focus optical device

A physical variable sensor with a processor circuit that can be used for any of a number of different applications. The variable sensor is compact and inexpensive to produce. The variable sensor comprises first, second and third substrates. On the second substrate is mounted a sensor component and a first processor circuit to convert the output of the sensor component to a standard electrical signal. A second processor circuit is provided on the third substrate. The second processor circuit includes an amplifier circuit, a digital fuzzy microprocessor and a luminous element to transmit an optical signal to the exterior. A solar cell can be provided on the first substrate to supply energy to the circuits. The first and third substrates are common to all types of sensors, and by modifying the second substrate different sensors to measure different types of variables can be produced.

Physical variable sensor and method of manufacturing the same

A light emitting semiconductor device including a light emitting element, an optical element for condensing, collimating or diverging a ray emitted from the light emitting element which is packaged as a single unit with the light emitting element, and a cap molded by a fiber reinforced resin for supporting the light emitting element, the cap having an opening for a light emitting window which is provided with the optical element.

Light emitting semiconductor device having an optical element

In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.

Method of manufacturing a semiconductor light-emitting device

A buffer layer employed for an epitaxial growth includes two kinds of lattices of a superlattice of a lattice matching and a superlattice of a lattice mismatching or of a heterointerface so as to obtain the gas trap effect and the distortion removal effect, thereby improving the quality of the semiconductor device.

Semiconductor light emitting device having a superlattice buffer layer

In a reflective photosensor in which a light emitting element and a light receiving element are disposed in a mold resin, a planar optical element (micro Fresnel lens) including a first lens section for projecting a light emitted from the light emitting element toward a sense object in an external space and a second lens section for introducing a reflection light reflected from the sense object to the light receiving element is arranged in the mold resin. Favorably, the light emitting element is a light emitting diode of an edge emitting type and is set in a posture in which the element lies on its side. A reflection mirror is disposed in the model resin to introduce a light emitted from the light emitting diode to the first lens section.

Reflective photosensor and semiconductor light emitting apparatus each

Semiconductor light-emitting device

An optical toothbrush used for medical treatment comprises a plurality of narrow fibers connected to a light generating device and extending through a brush base, wherein the fibers are bent to form an L-shape and project outwardly from the base to form a brush. Light emitted from the light generating device is guided into each fiber at its base and projected through the brush tips to provide oral hygiene.

Optical toothbrush and method of use

A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs:Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.

A stripe-shaped heterojunction laser with unique current confinement

A surface-emitting semiconductor laser having a lower reflection mirror including a semiconductor multilayer disposed on an n-type substrate so as to form an upper reflection mirror with TiPtAu such that a double heterojunction between the lower and upper reflection mirrors is configured in a columnar shape and that an insulating material is buried in a periphery of the double heterojunction. The non-alloyed metal of TiPtAu serves three functions of an ohmic metal, a reflective layer, and an etching mask.

Surface-emitting semiconductor laser and manufacturing method of same

A semiconductor laser having an internal current restriction includes a (100) face-oriented p-type GaAs substrate treated to have a groove or difference in level having an (n11) A face (n=1-5) as an inclined surface. An AlGaAs: Si layer, an AlGaAs:Be cladding layer, an AlGaAs active layer, and an AlGaAs:Sn cladding layer are grown on the substrate in the order mentioned. Since the Si acts as an n-type material on the (100) face and as a p-type material on the (n11) face, the AlGaAs:Si layer becomes a p-type layer solely in the groove, and it is in this portion that a current path is formed. The laser can be fabricated by molecular-beam epitaxy applied in a single step.

Growing community of inventors

Kyoto, Japan

Koichi Imanaka