Ngk Spark Plug Company, Limited

Hayashi Engineering Inc.

Koichi Ikawa

Takio Kojima

Yoshinori Tsujimura

Masahito Kida

Shinichiro Kito

Kotaro Ono

Between a gas sensing layer () and a base member () composed of a silicon substrate () and an insulating coat layer (), there is formed an adhesion layer, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer () and sensing electrodes () are electrically connected by abutment of a confronting surface () of sensing electrodes () confronting the gas sensing layer () and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer () varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes () are in contact with the gas sensing layer (), but the sensing electrodes are not in contact with the adhesion layer (). Therefore, the adhesion layer () need not be a complete insulating layer, and it is possible to use, as the adhesion layer, an incomplete insulating film or a conductive film, so that options of the adhesion layer () are increased.

Gas sensor

A cut that widens a through hole of an end portion of a headliner interior material breaks when an airbag is deployed, and is formed on an exterior-side of the end portion. The end portion of the headliner interior material is in close contact with a surrounding member provided around the end portion. In addition, an accessory is passed through the through hole and fixed to a body, while the end portion of the headliner interior material is held to the accessory around the through hole. When the airbag installed folded on the exterior side of the headliner interior material is deployed, the airbag deploys into a cabin from between the end portion and the surrounding member.

Automobile interior structure and headliner interior material

A micro-heater including a semiconductor substrate having a cavity; an insulating layer provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.

Growing community of inventors

Nagoya, Japan

Koichi Ikawa