Sony Corporation

Dowa Mining Co., Ltd.

Elpida Memory, Inc.

Nec Corporation

Ps4 Luxco S.a.r.l.

Jusco Kabushiki Kaisha

Koichi Hatakeyama

Akira Sugawara

Keiyo Kusanagi

Mitsuhisa Watanabe

Toshihiro Kanzaki

Katsumi Sugawara

Hiroyuki Fujishima

A semiconductor device includes a wiring board; a stack of semiconductor chips disposed over the wiring board, each of the semiconductor chip comprising via electrodes, the semiconductor chips being electrically coupled through the via electrodes to each other, the semiconductor chips being electrically coupled through the via electrodes to the wiring board; a first seal that seals the stack of semiconductor chips; and a second seal that covers the first seal. The first seal is smaller in elastic modulus than the second seal.

Semiconductor device and method of forming the same

There is provided a communication device including a secure communication unit configured to perform secure communication with an external reader/writer device, the secure communication being secure close-proximity communication, a first communication unit configured to perform high-speed communication with the reader/writer device, the high-speed communication being close-proximity communication that is faster than the secure communication, a second communication unit configured to, when communication via the high-speed communication is disconnected, communicate with the reader/writer device with a communication mode that is different from a communication mode of the high-speed communication, a power transmission unit configured to receive power transmitted from the reader-writer device by power transmission, and a secondary battery configured to store the power received by the power transmission unit. The second communication unit may be configured to, when communication via the high-speed communication is disconnected, operate with the power stored in the secondary battery.

Communication device, reader/writer device, communication system, and communication method

There is provided a communication device including a secure communication unit configured to perform secure communication, the secure communication being secure close-proximity communication, a high-speed communication unit configured to perform high-speed communication, the high-speed communication being close-proximity communication that is faster than the secure communication, and a power transmission unit configured to perform power transmission. Communication via the secure communication and the power transmission of the power transmission unit may be performed at timings that do not temporally overlap with each other.

Communication method

Communication device, communication method, and communication system

A semiconductor device includes a substrate, a stack of semiconductor chips, and a first sealing material. The substrate may include, but is not limited to, a chip mounting area and a higher-level portion. The higher level portion surrounds the chip mounting area. The higher-level portion is higher in level than the chip mounting area. The stack of semiconductor chips is disposed over the chip mounting area. A first sealing material seals the stack of semiconductor chips. The first sealing material is confined by the higher-level portion.

Semiconductor device, method of forming the same, and electronic device

A semiconductor device includes a substrate, a semiconductor chip, and first and second insulations. The substrate has at least a first region and a second region. The semiconductor chip structure covers the first region. The first insulation covers the second region. The first insulation has a first thermal expansion coefficient approximately equal to that of the semiconductor chip structure. The second insulation covers the semiconductor chip structure and the first insulation so that the semiconductor chip structure and the first insulation are sandwiched between the substrate and the second insulation. The second insulation has a second thermal expansion coefficient approximately equal to that of the substrate.

Semiconductor device and method of manufacturing the same

An online distribution system by which the time required for a downloading procedure in a shop can be performed in a short time by a download terminal connected to a search server through a data distribution server which is connectable to a personal terminal. The search server stores a plurality of titles of distribution information, searches the titles for a title designated for subscription from the personal terminal, and stores the searched out title and identification information transmitted from the personal terminal. The download terminal acquires identification information inputted from the outside, reads out, based on the acquired identification information, the title which corresponds to the identification information from the search server, reads out the distribution information corresponding to the read out title from the data distribution server, and records the read out distribution information onto a recording medium.

Online distribution system and method

Copper-base alloys having improved punching properties on press and a process for producing them

A leadframe of a single frame structure for supporting leads on IC chips. The leadframe is made of a high-strength, high-electroconductivity copper alloy. The copper alloy is produced by preparing an ingot of a copper alloy of 0.05-0.40 wt. % Fe, 0.05-0.40 wt. % Ni, 0.01-0.30 wt. % P, and optionally a total of 0.03-0.50 wt. % of either Sn or Zn or both and a total of 0.05-0.50 wt. % of at least one element of Ag, Co, B, Mn, Cr, Si, Ti and Zr, with the balance being Cu and incidental impurities, heating the ingot to 800 to 950.degree. C. and hot working the ingot to a reduction ratio of 50% or more, quenching the hot worked material from 600.degree. C. or above down to 300.degree. C. or below at a cooling rate of at least 1.degree. C./seconds, heat treating the quenched material at 380 to 520.degree. C. for 60-600 minutes without cold working, and subsequently carrying out cold working and heat treating at 450.degree. C. or below, whereby an Fe--Ni--P system intermetallic compound is precipitated in the Cu matrix as uniform and fine grains not larger than 50 nm.

Leadframe made of a high-strength, high-electroconductivity copper alloy

High-strength, high-electroconductivity copper alloys are produced by preparing an ingot of a copper alloy containing 0.05-0.40 wt % Fe, 0.05-0.40 wt % Ni, 0.01-0.30 wt % P, and optionally a total of 0.03-0.50 wt % of either Sn or Zn or both and a total of 0.05-0.50 wt % of at least one element of Ag, B, Mn, Cr, Si, Ti or Zr, with the balance being Cu and incidental impurities, heating the ingot to 800.degree. to 950.degree. C. and hot working it by a reduction ratio of 50% or more, quenching the hot worked material from 600.degree. C. or above to 300.degree. C. or below at a cooling rate of at least 1.degree. C./sec, heat treating the quenched material at 380.degree. to 520.degree. C. for 60 to 600 minutes without performing cold working, and cold working and heat treating it at 450.degree. C. or below, to precipitate an Fe--Ni--P system intermetallic compound in the Cu matrix as uniform and fine grains not larger than 50 nanometers. The copper alloys thus produced are superior in hardness, tensile strength, electrical conductivity and amenability to bending. The copper alloys are useful for making electric and electronic components, such as leadframes.

Process for producing high-strength, high-electroconductivity

A pan-type cooking utensil comprising a pan-shaped main body, a dome-shaped cover detachably fitted on the main body and having an exhaust cylinder integrally extending upwardly from the cover in the center thereof, a lid pivoted to the exhaust cylinder for opening and closing the exhaust cylinder, a rope extending through the exhaust cylinder and having one end secured to the cover and the other end connected to a lift mechanism. The main body is provided with hot air inlets.

Growing community of inventors

Tokyo, Japan

Koichi Hatakeyama