Showa Denko K.k.

Koichi Hasegawa

Isao Kabe

Atsushi Yoshinaga

Shigetaka Murasato

Koichiro Takahashi

A GaP green light-emitting diode includes an n-type GaP single-crystal substrate on which is formed at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a nitrogen-doped p-type GaP layer. The concentration of carbon and/or sulfur in the nitrogen-doped n-type GaP layers is controlled to be not more than 6.times.10.sup.15 cm.sup.-3.

Gallium phosphide green light-emitting device

An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration of not more than 1.times.10.sup.17 cm.sup.-3. A light-emitting diode is fabricated using the epitaxial wafer thus formed provided with electrodes.

Epitaxial wafer for a light-emitting diode and a light-emitting diode

An epitaxial wafer for a GaP pure green light emitting diode includes an n-type single crystal GaP substrate formed in order thereon with a first n-type GaP epitaxial layer, a second n-type GaP epitaxial layer and a p-type GaP epitaxial layer. The p-type GaP epitaxial layer has a sulfur concentration of not greater than 1.times.10.sup.17 cm.sup.31 3, the second n-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the p-type GaP epitaxial layer of 0.5-5.times.10.sup.17 cm.sup.-3, and the p-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the second n-type GaP epitaxial layer that is 1-10.times.10.sup.17 cm.sup.-3 and is not less than twice the carrier concentration of the second n-type GaP epitaxial layer on the side thereof interfacing with the p-type GaP epitaxial layer. A GaP pure green light-emitting diode exhibiting high brightness includes the epitaxial wafer, an n-type electrode provided on a back surface of the single crystal substrate and a p-type electrode provided on the upper surface of the p-type GaP epitaxial layer.

Epitaxial wafer for GaP pure green light-emitting diode and GaP pure

A light-emitting diode comprises a first layer of Si-doped N-type Ga.sub.1-x Al.sub.x As, a second layer of Si-doped P-type Ga.sub.1-y Al.sub.y As and a third layer of P-type Ga.sub.1-z Al.sub.z As, in that order, in which the first and third layers have a higher Al concentration than the second layer, an Al concentration in the second layer decreases going from a first layer side to a third layer side, an Al concentration in a portion of the second layer in contact with the third layer is higher than an Al concentration value in a portion of the second layer in contact with the first layer minus 0.06, the second layer is formed to a thickness of approximately 8 .mu.m to 50 .mu.m, and light emission is via the first layer.

Light-emitting diode

An epitaxial wafer for a light-emitting diode comprises an n-GaAs single crystal substrate on which a Si-doped n-Ga.sub.1-x Al.sub.x As epitaxial layer, a Si-doped p-Ga.sub.1-y Al.sub.y As active layer, and a p-Ga.sub.1-z Al.sub.z As window layer are epitaxially formed, and in which the window/layer has a Si concentration of below 1.times.10.sup.18 cm.sup.-3.

Growing community of inventors

Chichibu, Japan

Koichi Hasegawa