Mitsubishi Denki Kabushiki Kaisha

Koichi Hammanaka

Susumu Noda

Kazuo Kyuma

Jun Ohta

Keisuke Kojima

Masaaki Kameya

In a light-responsive semiconductor device in which the laser oscillation state is controlled by incident light, a layer of material having a conductivity modulatable by light is integrated in a semiconductor laser structure and is responsive to the incident light for the control of the laser oscillation state of the device. In one embodiment constituting a light logic element, a plurality of semiconductor lasers are integrated on a substrate with each respective semiconductor laser having a grating along the entirety or a portion thereof and provided with a light waveguide connecting with a waveguide of an adjacent semiconductor laser. In a bistable semiconductor laser there are provided two different conductivity type light confinement layers, an active layer comprising a multiple quantum well structure which is between the two light confinement layers, a grating provided close to the quantum well active layer. The oscillation wavelength established by the grating is shorter than the peak gain wavelength produced by the quantum well active layer.

Growing community of inventors

Amagasaki, Japan

Koichi Hammanaka