Toyoda Gosei Co., Ltd.

Kanagawa Academy of Science and Technology

Toyota Gosei Co., Ltd.

Koichi Goshonoo

Miki Moriyama

Satoshi Wada

Kosuke Yahata

Yuya Ishiguro

Jun Ito

Shiro Yamazaki

Koji Okuno

Seiji Nagai

Masanobu Senda

Toshimasa Hayashi

Shingo Totani

Masao Kamiya

Yoshiki Saito

Koji Hirata

Naoki Nakajo

Takayuki Sato

Naoki Arazoe

Atsushi Miyazaki

Yasuhide Yakushi

Masato Aoki

Ryohei Inazawa

Takashi Kawai

Taro Hitosugi

Tetsuya Hasegawa

Junpei Kasai

Tomoharu Shiraki

Toshiya Umemura

Takahiro Mori

The present invention provides a flip-chip mounted monolithic micro LED having improved contrast. The light-emitting device includes a substrate, an n-type layer, a light-emitting layer, a p-type layer, a transparent electrode, a p-electrode, an n-electrode, a protective film, an absorbing structure, and a side wall insulating film. The absorbing structure is a layered body in which a dielectric film and a metal film are alternately deposited, and the top layer is a dielectric film. Reflected light of light emitted from the light-emitting layer or reflected light of light from the outside, or transmitted light from the backside of the substrate can be absorbed by the absorbing structure, thereby improving contrast.

Flip-chip mounted monolithic micro LED display element including a plurality of light-emitting parts arranged in a matrix

A light emitting element includes a substrate and a first light emitting part and a second light emitting part arranged thereon to emit different colored lights. The first light emitting part includes a first laminate structure where a n-type semiconductor film and a first semiconductor film are laminated, a first capping film and a p-type semiconductor film laminated on the first laminate structure. The second light emitting part includes a second laminate structure where the n-type semiconductor film, the first semiconductor film, a first intermediate film, and a second semiconductor film are laminated, a second capping film and the p-type semiconductor film laminated on the second laminate structure, the first capping film being the first intermediate film. A bandgap of the first intermediate film is higher than the first semiconductor film and the second semiconductor film. The bandgap of the second semiconductor film is lower than the first semiconductor film.

Light-emitting element and method for manufacturing same

A light emitting device includes plural light emitting elements arranged on a substrate in lines and individually emit light each other. The light emitting device includes a single continuous n-type semiconductor layer on the substrate shared by the plural light emitting elements, a single continuous light emitting layer on the n-type semiconductor layer shared by the plural light emitting elements, a single continuous p-type semiconductor layer on the light emitting layer shared by the plural light emitting elements, a single continuous contact electrode film on the p-type semiconductor layer shared by the plural light emitting elements, and plural p-side bonding electrodes on the contact electrode film respectively used for the plural light emitting elements. The contact electrode film and the p-type semiconductor layer are configured so as to control current diffusion in in-plane directions thereof.

Light emitting device

A first light emission region includes an n-type contact layer, a first light-emitting layer, a p-type contact layer, and a wavelength conversion layer. The second light emission region includes an n-type contact layer, a first light-emitting layer, a first intermediate layer, a second light-emitting layer, and a p-type contact layer. The third light emission region includes an n-type contact layer, a first light-emitting layer, a first intermediate layer, a second light-emitting layer, a second intermediate layer, a third light-emitting layer, and a p-type contact layer. The wavelength conversion layer is disposed between the p-type contact layer of the first light emission region and the driving circuit substrate.

Light-emitting device

The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by the transparent electrode is suppressed. The light-emitting device comprises an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent electrode, a transparent insulating film, and a reflection electrode. The transparent electrode contains In. The thickness of the transparent electrode is 10 nm to 150 nm. The reflection electrode is a p-type electrode. The reflection electrode Phas a plurality of contact electrodes being in contact with the transparent electrode at a plurality of openings. The number density of the contact electrodes is 400/mmto 1,000/mm.

Semiconductor light-emitting device

A group-III nitride compound semiconductor light emitting element includes a substrate that has a main face on which an concave and convex portion is formed, a group-III nitride compound semiconductor layer that is formed on the main face of the substrate, and a clearance that is formed between the substrate and the group-III nitride compound semiconductor layer at a first region of the semiconductor light emitting element. In the first region, a portion of the group-III nitride compound semiconductor layer and a portion of the clearance are disposed in a concave of the concave and convex portion on a section through two adjacent top portions of the concave and convex portion and a bottom portion located between the adjacent top portions.

Group-III nitride compound semiconductor light emitting element, manufacturing method therefor and semiconductor light emitting device

A light emitting device includes a double-sided electrode type semiconductor light emitting element that has a first electrode formed on a front side of the double-sided type semiconductor light emitting element and a second electrode formed on a rear side of the double sided type semiconductor light emitting element and is configured to emit light from a side wall surface of the double-sided electrode type semiconductor light emitting element, a first lead frame that is bonded to a whole area of one face of the first electrode, a second lead frame that is bonded to a whole area of one face of the second electrode, and a case in which a portion of the first lead frame and a portion of the second lead frame is embedded.

Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30&#xb0; with respect to R-plane about a line of intersection Lformed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction Lof the sapphire substrate; and the m-axis of the layer, which is inclined by 30&#xb0; from the a-axis thereof, is perpendicular to the main surface (inclined by 30&#xb0; from the exposed R-plane surfaces) of the sapphire substrate.

Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device

A light-emitting device includes a case including a first substrate and a sidewall on the first substrate, a light-emitting, element that is mounted on the first substrate in a region surrounded by the sidewall and includes a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate, and a low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate. A side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate.

Light-emitting device having tapered portions of different lengths

A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region.

Group III nitride semiconductor light-emitting element and method for producing the same

When a p-layercomposed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layeris in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5&#xd7;10Pa or lower. The temperature of the thermal treatment is 500&#xb0; C. for about 1 hour.

Method for producing transparent conductive layer comprising TIO2 and method for producing semiconductor light-emitting element utilizing said method for producing transparent conductive layer

The present invention provides a Group III nitride semiconductor light-emitting device exhibiting high-intensity light output in a specific direction and improved light extraction performance. The Group III nitride semiconductor light-emitting device comprises a sapphire substrate, and a layered structure having a light-emitting layer provided on the sapphire substrate and formed of a Group III nitride semiconductor. On the surface on the layered structure side of the sapphire substrate, a two-dimensional periodic structure of mesas is formed with a period which generates a light intensity interference pattern for the light emitted from the light-emitting layer. The light reflected by or transmitted through the two-dimensional periodic structure has an interference pattern. Therefore, the light focused on a region where the light intensity is high in the interference pattern can be effectively output to the outside, resulting in the improvement of light extraction performance as well as the achievement of desired directional characteristics.

Group III nitride semiconductor light-emitting device

An n-type layer of a light-emitting device has a structure in which a first n-type layer, a second n-type layer and a third n-type layer are sequentially laminated in this order on a sapphire substrate, and an n-electrode composed of V/Al is formed on the second n-type layer. The first n-type layer and the second n-type layer are n-GaN, and the third n-type layer is n-InGaN. The n-type impurity concentration of the second n-type layer is higher than that of the first n-type layer and the third n-type layer.

Group III nitride compound semiconductor light-emitting device and method for producing the same

A manufacturing method of a mounting part of a semiconductor light emitting element comprising: preparing a semiconductor light emitting element including an electrode which has a surface, and a board which has a surface; forming a plurality of bump material bodies on at least one of the surface of the electrode and the surface of the board by shaping bump material into islands, wherein the bump material is paste in which metal particles are dispersed, a top surface and a bottom surface of the bump material bodies have different areas, and the top surface is practically flat; solidifying the bump material bodies by thermally processing the bump material bodies; and fixing the semiconductor light emitting element and the board through the bumps.

Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting element

A light emitting element which emits light of a wavelength, includes a substrate which is transparent to the wavelength of emitted light and includes a first surface and a second surface; a semiconductor layer stacked on the first surface; a first electrode which is reflective to the wavelength of emitted light and formed on a surface of the semiconductor layer, wherein electrical resistance of the first electrode in a farthest distance is equal to or smaller than 1&#x3a9;; and a second electrode which is reflective to the wavelength of emitted light and formed on the second surface, wherein electrical resistance of the second electrode in a farthest distance is equal to or smaller than 1&#x3a9;.

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Kiyosu, Japan

Koichi Goshonoo