Kabushiki Kaisha Toshiba

Koichi Genei

Satoshi Komoto

Seiji Iida

Naohiro Shimada

Kazuo Fukuoka

Makoto Okada

Shinji Nunotani

Katsufumi Kondo

Tokuhiko Matsunaga

Kenji Fujimoto

Miwa Ishida

An embodiment has an emission layer, a first electrode having a reflective metal layer, an insulating layer, first and second conductivity type layers, and a second electrode. The insulating layer is provided on the first electrode and has an opening where a portion of the first electrode is provided. The first conductivity type layer is provided between the insulating layer and the emission layer and has bandgap energy larger than that of the emission layer. The second conductivity type layer is provided on the emission layer and has a current diffusion layer and a second contact layer. The second contact layer is not superimposed on the opening of the insulating layer, and a thickness of the current diffusion layer is larger than that of the first contact layer. The second electrode has a pad portion and a thin portion extends from the pad portion onto the second contact layer.

Semiconductor light-emitting device

According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer.

Light emitting device and optical transmission system

Light emitting device

A semiconductor laser of present invention is constructed by an aluminium oxide (Al O ) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiN , or Si N ) film on the aluminium oxide film, and a silicon oxide (SiO ) film on the silicon nitride film. These films are made successively by a method of Electron Cyclotron Resonance (ECR) sputtering.

Semiconductor laser and method of manufacturing the same

A semiconductor laser of present invention is constructed by an aluminum oxide (Al O ) film on an end surface opposed to a beam emission surface of the semiconductor laser, a silicon nitride (SiN , or Si N ) film on the aluminum oxide film, and a silicon oxide (SiO ) film on the silicon nitride film. These films are made successively by a method of Electron Cyclotron Resonance (ECR) sputtering.

Growing community of inventors

Chiba-ken, Japan

Koichi Genei