Kabushiki Kaisha Toshiba

Koichi Gen-Ei

Akira Tanaka

Hirokazu Tanaka

Hideo Shiozawa

Yoshiyuki Itoh

Minoru Watanabe

Akio Makuta

Osamu Horiuchi

The present invention provides a semiconductor laser element, a method of fabrication thereof, and a multi-wavelength monolithic semiconductor laser device that achieve self-sustained pulsation up to a high output level and achieve self-sustained pulsation over a wide output range. A semiconductor laser element that exhibits self-sustained pulsation in a predetermined output region, said semiconductor laser element comprising: a substrate; a first conductive type clad layer formed on said substrate; an active layer formed on said first conductive type clad layer for emitting light by current injection; a second conductive type first clad layer formed on said active layer; and a stripe-shaped second conductive type second clad layer formed on said second conductive type first clad layer in a first direction, in such a manner that the cross-sectional surface of said stripe-shaped second conductive type second clad layer in a direction perpendicular to said first direction has a shape having an upper edge and a lower edge that face each other and side edges that connect between said upper edge and said lower edge, where the minimum width thereof is at least 70% but no more than 100% of the maximum width.

Semiconductor laser element, method of fabrication thereof, and multi-wavelength monolithic semiconductor laser device

A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the second conductivity type has a ridge stripe. The ridge stripe includes: an upper part having substantially vertical sidewalls; and a lower portion having sidewalls inclined so that the stripe becomes wider toward the active layer.

Semiconductor laser device and its manufacturing method

A high-output semiconductor laser of a real index-guided structure comprises: a first conductive type clad layer; active layer for emitting light by current injection; second conductive type first clad layer; second conductive type second clad layer as a ridge waveguide; current-blocking layer formed in both sides of the second conductive type second clad layer and having a larger band gap than those of the second conductive type first and second clad layers; and second conductive type third clad layer having a mobility enough to guide a current to the second conductive type second clad layer and prevent a flow of a leak current into the current-blocking layer.

Semiconductor laser and method for manufacturing the same

Growing community of inventors

Chiba, Japan

Koichi Gen-Ei