Canon Kabushiki Kaisha

Hitachi Displays, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Japan Display Inc.

Oki Electric Industry Co., Ltd.

Nippon Steel Corporation

Oki Semiconductor Co., Ltd.

Scg Chemicals Company Limited

Siam Refractory Industry Co., Ltd.

Nippon Steel Sumitomo Metal Corporation

Koichi Fukuda

Yuki Yoshimura

Kohei Okamoto

Junichi Saito

Masafumi Kimura

Ichiro Onuki

Akihiro Nishio

Hideaki Yamamoto

Ryo Yamasaki

Makoto Oikawa

Yoshihito Tamaki

Yoshiaki Nakamura

Masaaki Iwane

Hajime Ikeda

Hideaki Takamiya

Shoji Kono

Akihiko Kanda

Yumi Takao

Yoshiaki Takada

Shunichi Wakashima

Tetsuya Nagata

Fumihiro Inui

Tomohiro Nishiyama

Junji Iwata

Nobutaka Mizuno

Satoru Kawasaki

Tsutomu Sato

Tetsuya Oshima

Hiroshi Matsuda

Koshi Hatakeyama

Masataka Yashima

Norihito Hiasa

Toshinori Hasegawa

Masahiro Okuda

Kazuhiro Yahata

Shohei Tsutsumi

Ryuichiro Isobe

Masao Uehara

Koji Hiraga

Masayuki Yanagihara

Toshio Miyazawa

Shinichi Komura

Masaya Adachi

Osamu Itou

Shinichiro Oka

Masateru Morimoto

Hirotaka Imayama

Hideo Mori

Kenji Kato

Hideyuki Hamano

Shoichi Hirota

Sho Suzuki

Hideomi Kumano

Akihide Sano

Yu Inagaki

Tomoyuki Tezuka

Kazuya Igarashi

Rei Kurashima

Kouji Hayakawa

Masato Sugiura

Koki Takami

Somkeat Suebthawilkul

Thanapong Prasertphol

Michitaka Sakaida

Masashi Jobara

Teewin Tuaprakone

Kanokon Thongrod

Jaturong Jitputti

Takayuki Araki

Keisuke Irie

Yoshifumi Morizane

Tomoyuki Nakagawa

Junichi Ihata

Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

Photoelectric conversion device, imaging system, and mobile apparatus

In an image sensor having a plurality of pixels including focus detection pixels that outputs signals from which a pair of focus detection signals having parallax can be obtained based on light flux passing through different pupil regions of an imaging optical system, each pixel comprises: at least one photoelectric conversion unit; and a microlens optical system provided on a side on which light is incident with respect to the photoelectric conversion unit, wherein a shape of a principal curved surface of the microlens optical system is such that a first curvature of the microlens optical system at a first distance from an optical axis of the microlens optical system is larger than a second curvature of the microlens optical system at a second distance which is farther from the optical axis of the microlens optical system than the first distance.

Image sensor and image capturing apparatus

One embodiment of the present invention provides an image processing method, the method comprising: acquiring a plurality of viewpoint images; generating a contrast distribution from the plurality of viewpoint images; and generating an output image by performing image processing in accordance with the contrast distribution with respect to an image based on the plurality of viewpoint images.

Image processing method, image processing device, and image pickup apparatus

In an image sensor, if a pixel for focusing has a structure having a light-shielding layer for performing pupil division, between the micro lens and the photoelectric conversion unit, the pixel may be configured such that the focal position of the micro lens is positioned further on the micro lens side than the light-shielding layer, and the distance from the focal position of the micro lens to the light-shielding layer is greater than 0 and less than nFΔ, where n is the refractive index at the focal position of the micro lens, F is the aperture value of the micro lens, and Δ is the diffraction limit of the micro lens. This enables variation in the pupil intensity distribution of the pixel for focusing due to positional production tolerance of components to be suppressed.

Image sensor and imaging device

An apparatus includes pixels on a substrate. Each pixel includes a first portion, a second, and a microlens. The substrate has a first surface on an incidence side and a second surface opposite to the first surface, and includes an inter-pixel portion isolating adjacent pixels from each other, and an intra-pixel portion isolating the first and second portions from each other. The inter-pixel portion includes a first region located adjacently to the first surface, and a second region located adjacently to the second surface. The intra-pixel portion includes a third region located adjacently to the first surface, and a fourth region located adjacently to the second surface. The first and third regions are shifted with respect to the second and fourth regions, respectively, in an identical direction that is a direction orthogonal to a longitudinal direction of the intra-pixel portion in plan view from the first surface.

Apparatus, system, and moving body

The present invention relates to a thermal emissivity coating composition comprising: a) an emissivity agent in an amount from 30 to 65% by weight with respect to the total weight of the thermal emissivity coating composition; b) a filler selected from the group consisting of oxides of aluminum, silicon, magnesium, calcium, boron and mixtures of two or more thereof, in an amount from 10 to 35 wt % with respect to the total weight of the thermal emissivity coating composition; and c) a binder in an amount from 12 to 52 wt % with respect to the total weight of the thermal emissivity coating composition; wherein the emissivity agent comprises cobalt oxide in an amount from 10 to 25 wt %, preferably 12 to 25 wt % with respect to the total weight of the thermal emissivity coating composition and further comprises chromium oxide and titanium oxide.

High emissivity coating composition and substrate coated therewith

A focus detection device calculates a shift amount between a first focus detection signal and a second focus detection signal both generated based on a signal obtained from an image sensor. The device also calculates a conversion coefficient and applies the conversion coefficient to the shift amount to convert the shift amount into a defocus amount of an imaging optical system. The device calculates the conversion coefficient based on at least one of a pupil eccentricity amount and an incident pupil distance, both are dependent on an image height at a focus detection position.

Focus detection device, focus detection method, and image capture apparatus

An electronic device includes a liquid crystal display device having a first substrate, a second substrate bonded to the first substrate, with liquid crystal material held between the first substrate and the second substrate, and an upper polarizing plate affixed to the second substrate. A protective member is disposed over the upper polarizing plate, and an adhesive member is disposed between the protective member and the upper polarizing plate without an air layer between the protective member and the upper polarizing plate. The protective member is configured as a protective cover of the electronic device.

Display device and hand-held electronic device

An image capturing apparatus in which a plurality of pixels each having a plurality of photoelectric conversion units for receiving light fluxes that have passed through different partial pupil regions of an imaging optical system are arrayed, wherein an entrance pupil distance Zof the image sensor with respect to a minimum exit pupil distance Lof the imaging optical system and the maximum exit pupil distance Lof the imaging optical system satisfies a condition of 

An imaging device suitable for focus detection of a pupil division phase difference method includes: a light receiving unit provided on a first surface side of a semiconductor substrate and having a plurality of pixels arranged in a two-dimensional form; and a read-out circuit provided on a second surface side of the semiconductor substrate opposite to the first surface side and configured to read signals from the pixels. Each of pixels has at least two photoelectric conversion elements and a separation region which is a region between the two photoelectric conversion elements and a separation region control electrode arranged on the second surface side of the separation region and configured to control a potential of the separation region.

Imaging device and imaging apparatus

An image processing apparatus includes an acquisition unit which acquires a parallax image generated based on a signal of a photoelectric converter among a plurality of photoelectric converters which receive light beams passing through partial pupil regions of an imaging optical system different from each other, and acquires a captured image generated by combining signals of the plurality of photoelectric converters, and an image processing unit which performs correction process so as to reduce a defect included in the parallax image based on the captured image.

Image processing apparatus, image pickup apparatus, image processing method, and non-transitory computer-readable storage medium

An image sensor comprising pixels each includes, an photoelectric conversion unit, a first inner-layer lens, a second inner-layer lens, and an on-chip microlens. A light-shielding wall around the second inner-layer lens is provided between adjacent pixels. A first positional difference between center positions of the first inner-layer lens and the photoelectric conversion unit, a second positional difference between center positions of the second inner-layer lens and the photoelectric conversion unit, and a third positional difference between center positions of the on-chip microlens and the photoelectric conversion unit satisfy: the second positional difference&#x3c;the first positional difference&#x3c;the third positional difference.

Image sensor and image capture apparatus

A focus detection apparatus configured to perform a focus detection using a pixel signal obtained by photoelectrically converting light passing through different pupil areas in an imaging optical system includes an acquirer configured to acquire the pixel signal, a signal generator configured to generate a plurality of focus detection signals corresponding to the different pupil areas using the pixel signal, and a focus detector configured to calculate a detected defocus amount based on the plurality of focus detection signals, and to calculate a corrected defocus amount by correcting the detected defocus amount based on a phase transfer function corresponding to the different pupil areas.

Focus detection apparatus, focus detection method, and storage medium

Growing community of inventors

Tokyo, Japan

Koichi Fukuda