Kokusai Denshin Denwa Kabushiki Kaisha

Kokusai Denshin Denwa Co., Ltd.

Kohsuke Nishimura

Kazuo Sakai

Yasuyuki Nagao

Yukitoshi Kushiro

At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission.

Semiconductor light emitting device and method for manufacturing the same

At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Since the one conductivity type nanostructure PS layer is formed by anodizing the non-degenerate n-type crystalline silicon layer whose thickness is established in advance, the thickness which can provides a maximum luminescence efficiency can be obtained correctly. Then a semiconductor light emitting device whose luminescence efficiency is improved without increasing an unnecessary series resistance is provided. An inexpensive semiconductor light emitting device having a large light emitting area can be provided, since silicon wafer having a large diameter can be employed as the material for light emission

Semiconductor light emitting device having nanostructure porous silicon

Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.

Method for manufacturing nitrogen-doped group II-VI compound

A method which permits the growth of high-quality crystals of n-type II-VI compound semiconductors containing sulfur, by suppressing the reaction of a group III or VII element as a dopant with a group II material at low temperature. A raw material gas containing an organometallic material of the group III or organic material of the group VII is premixed with a raw material gas containing organic sulfur material, then the premixture is mixed with a raw material gas containing an organometallic material of the group II, and the mixture is used to grow a crystal of an n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method.

Method for growing crystals of N-type II-VI compound semiconductors

A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer (3), deposited on a substrate (1). The substrate (1) is made of GaAs, InP, GaAsP or Ge. Said active layer (3) and said clad layers (2, 4) are made of II-VI group compound semiconductor which is lattice-matched with the substrate at both room temperature and growing temperature, for instance 500.degree. C. Said II-VI group compound semiconductor has the same linear thermal expansion coefficient as that of the substrate. The linear thermal expansion coefficient of the II-IV group compound semiconductor is adjusted by additive of Cd, Mg or Hg.

Light emitting heterojunction semiconductor device

A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer, and which are deposited on a semiconductor substrate. The substrate is made of one of GaAs, GaP, InP, Si, Ge, ZnSe and mixed crystals of GaAsP. The active layer is made of at least one of II-VI group compound semiconductor, I-III-VI.sub.2 group compound semiconductor, and II-IV-V.sub.2 group compound semiconductor. The clad layer is made of II-transition metal-VI group compound semiconductor, which is lattice-matched to the active layer.

Growing community of inventors

Tokyo, Japan

Kohsuke Nishimura