Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Renesas Electronics Corporation

Seiko Precision Inc.

Kohji Shinomiya

Yasuyuki Endo

Shinsuke Igarashi

A photoelectric conversion device adopts the structure reflecting the finding that color separation by the photoelectric conversion, which utilizes the difference of the PN junction depth of a semiconductor region, has the strong tendency that separation of a B signal is easy but separation of a G signal and an R signal becomes imperfect. That is, to cope with the tendency of the imperfect color separation of a G signal and an R signal, PN junction surfaces (JNC_B, JNC_R) of two photodiodes (PDs) for R light and B light are superimposed in the depth direction, and PD to G light is arranged independently. Accordingly, the color separation property of each RGB light wavelength band can be improved, the occupying area can be reduced compared with the case where each PD of RGB light is dispersed in the plane direction, and simplification of the semiconductor layer structure can be realized.

Photoelectric conversion device and imaging device

A solid state imaging apparatus includes a solid state imaging element, an optical lens held by a frame, and a flexible printed circuit board having first and second surfaces. The solid state imaging element is mounted on the first surface of the flexible printed circuit board and the frame is mounted on the second surface.

Solid state imaging apparatus

Each of a pair of power supply electric lines (and) connected to power supply pads of a solid state image sensor () and a pair of power supply electric lines (and) connected to power supply pads of an integrated circuit chip () is arranged so that the power supply electric lines included in each power supply electric line pair are in parallel with each other and has a very small gap between them. The power supply electric lines (to) have a certain width and bend portions that are curved smoothly with a predetermined curvature or less and are formed on a flexible wiring board (). In each of the solid state image sensor () and the integrated circuit chip (), the high-potential and low-potential power supply pads are arranged side by side.

Solid state image sensing device

An integrated circuit chip module includes a first integrated circuit chip including a first power source pad for a first power voltage and an adjacent second power source pad for a second power voltage, the first power voltage being higher than the second power voltage, a second integrated circuit chip including a third power source pad for the first power voltage and an adjacent fourth power source pad for the second power voltage, and a wiring board including a first power source wire electrically connected to the first power source pad, a second power source wire electrically connected to the second power source pad, a third power source wire electrically connected to the third power source pad, and a fourth power source wire electrically connected to the fourth power source pad. Distance between the first and second power source wires is shorter than distance between the first or second power source wires and the third or fourth power source wires, and distance between the third and fourth power source wires is shorter than distance between the first or second power source wires and the third or fourth power source wires.

Integrated circuit chip module

A portable telephone including an integrated circuit chip module with a first integrated circuit chip including a first power source pad for a first power voltage and an adjacent second power source pad for a second power voltage, the first power voltage being higher than the second power voltage, a second integrated circuit chip including a third power source pad for the first power voltage and an adjacent fourth power source pad for the second power voltage, and a wiring board including a first power source wire electrically connected to the first power source pad, a second power source wire electrically connected to the second power source pad, a third power source wire electrically connected to the third power source pad, and a fourth power source wire electrically connected to the fourth power source pad. Distance between the first and second power source wires is shorter than distance between the first or second power source wires and the third or fourth power source wires, and distance between the third and fourth power source wires is shorter than distance between the first or second power source wires and the third or fourth power source wires.

Portable telephone

A solid state imaging apparatus includes a solid state imaging element, an optical lens held by a frame, and a flexible printed circuit board having first and second surfaces. The solid state imaging element is mounted on the first surface of the flexible printed circuit board and the frame is mounted on the surface.

A solid-state image pickup apparatus includes a solid-state image pickup device having a layer of microlenses above a color filter. The solid-state image pickup device is mounted on a side of a flexible printed circuit board by flip-chip bonding, opposite the opening. An adhesive in a gap between the solid-state image pickup device and the flexible printed circuit board strengthens the apparatus. The distance between the edge of the microlens layer and the edge of the flexible printed circuit board defining the opening and nearest to the microlens layer is 2.5 to 10 times wider than the gap between the solid-state image pickup device and the flexible printed circuit board.

Solid-state image pickup apparatus limiting adhesive intrusion

On the circuit surfaces of integrated circuit chips, there are adjacently laid out a power source pad for a power source wire at a plus voltage side and a power source pad for a power source wire at a minus voltage side. On a single-surface printed wiring board, a first set of two power source wires and a second set of two power source wires respectively are flip-chip mounted to two power source pads of the integrated circuit chips. The first and second sets of the power source wires are substantially parallel to each other, with substantially constant wire widths and with a substantially constant wire interval. Near the outer periphery of the printed wiring board, the first and second sets of the power source wires are bent smoothly and follow the periphery of the printed wiring board.

A method of producing a solid image pickup device including a solid image pickup element, and an optical lens held in a housing that is mounted on a flexible wiring board. A fixing device fixes the flexible wiring board in a folded state corresponding to an external shape of the solid image pickup device during bonding of the flexible wiring board.

Method for producing solid-state image pickup device

A solid image pickup apparatus includes a flexible printed circuit board. A solid image pickup element and an optical lens held in a casing are disposed on the flexible printed circuit board. The flexible printed circuit board has a surface on which a capacitor is formed.

Solid image pickup apparatus

A semiconductor integrated circuit device includes a semiconductor substrate having a first surface and including an electrode on the first surface of the semiconductor substrate; a surface protecting film covering the first surface of the semiconductor substrate; an electrode underlayer on the surface protecting film, in electrical contact with the electrode; an external electrode on the surface protecting film, in electrical contact with the electrode underlayer, and having a substantially planar external surface; and a barrier part on the surface protecting a barrier against intrusion of moisture and ions into the semiconductor substrate, the barrier part having the same area as the semiconductor substrate and a substantially planar external surface.

Resin encapsulated electrode structure of a semiconductor device, mounted semiconductor devices, and semiconductor wafer including multiple electrode structures

A method of producing a packaged semiconductor chip including hardened resin packaging and a polished electrode includes producing an electrode on a first surface of a semiconductor substrate; depositing a glass layer on the first surface of the semiconductor substrate but not on the electrode; depositing a resin layer on the glass layer; curing the resin layer on the glass layer; polishing an external surface of the electrode and the resin layer so that the external surface and the resin layer, after polishing, are substantially planar, thereby producing a flip-chip package; mounting the flip-chip package on a printed circuit board via the electrode; testing the flip-chip package on the printed circuit board; and removing the flip-chip package from the printed circuit board.

Process for manufacturing a flip-chip integrated circuit

When a signal source to be amplified has an AC voltage signal superimposed on a DC voltage, instead of providing two coupling capacitors in a differential amplifier, a third differential amplifier is provided for receiving the outputs of a first differential amplifier and a second differential amplifier.

Differential amplifier circuit

A semiconductor integrated circuit device includes a semiconductor substrate having a first surface and including electrodes on the first surface of the semiconductor substrate; a glass coating film covering the first surface of the semiconductor substrate except the electrodes; an external electrode on the electrode in electrical contact with the electrode and having a polished external surface; and a cured resin layer on the glass coating film forming a barrier against intrusion of moisture and ions into the semiconductor substrate, and having the same area as the semiconductor substrate, and a polished external surface.

Growing community of inventors

Tokyo, Japan

Kohji Shinomiya