Sharp Kabushiki Kaisha Corporation

Kohji Hamaguchi

Hiroshi Iwata

Akihide Shibata

Yoshinao Morikawa

Masaru Nawaki

Takahiro Inoue

Nobuaki Matsuoka

An illuminance sensor detects a flicker with higher accuracy than in the related art. The illuminance sensor includes: a light receiving unit that receives light and outputs a current; a flicker measurement counter circuit that performs AD conversion on the current and outputs a first digital signal to a flicker measurement storage device; an illuminance measurement counter circuit that performs AD conversion on the current and outputs a second digital signal to an illuminance measurement storage device; and a flicker detection unit that detects a flicker by analyzing the first digital signal stored in the flicker measurement storage device. A cycle during which the first digital signal is output from the flicker measurement counter circuit is shorter than a cycle during which the second digital signal is output from the illuminance measurement counter circuit.

Illuminance sensor, proximity sensor, electronic device, and surveillance system

A proximity sensor includes: a light emitting unit that emits light; a light receiving unit that generates measurement current which includes object reflected light current and non-detection-target-object reflected light current; and an initial calibration execution unit that updates, on the basis of a value of the measurement current, an offset value according to the non-detection-target-object reflected light current, in a case where the value of the measurement current is equal to or less than an initial threshold.

Proximity sensor, proximity illumination intensity sensor, electronic device, and proximity sensor calibration method

A method for driving a semiconductor memory device includes a memory array having a plurality of memory cells arranged in rows and columns. Each memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a source and a drain as diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges. The method includes the steps of: selecting a row line connected to the gate electrode of a memory cell to be selected; grounding a first column line connected to the source of the memory cell to be selected; and applying a first potential to a second column line and a second potential to a third column line at the same time.

Growing community of inventors

Sakai, Japan

Kohji Hamaguchi