International Rectifier Corporation

Siliconix Technology C. V.

Kohji Andoh

Davide Chiola

Silvestro Fimiani

Daniel Marvin Kinzer

Fabio Necco

Fabrizio Rue Redda

He Zhi

Fabrizio Ruo Redda

A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

Merged P-i-N Schottky structure

Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.

A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device.

Termination design with multiple spiral trench rings

A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.

Fast recovery diode with a single large area p/n junction

Merged P-i-N schottky structure

A method for adjusting the resistivity in the surface of a semiconductive substrate including selective measurement and counter-doping of areas on a major surface of a semiconductive substrate.

Process for preparation of semiconductor wafer surface

A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature-sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.

Temperature-sensing diode

Process for forming fast recovery diode with a single large area P/N junction

A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial ('epi') layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.

Trench Schottky barrier diode

A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dose (e.g. less than about 9E12 atoms per cm) such that the barrier height is slightly increased and the leakage current reduced without forming pn junction and retaining the peak boron concentration in the titanium silicide layer.

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El Segundo, CA, United States of America

Kohji Andoh