Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Kohichi Tanda

Takayuki Hirose

Norihito Tsukahara

Toshiyuki Kojima

Keiko Ikuta

Hiroyuki Tani

Akihisa Nakahashi

Manabu Gokan

Yoko Kasai

Lianji Jin

A wireless power feeding method includes causing each of a plurality of power transmitters to acquire power amounts for power received by one or more of a power receptors which are targets for power transmission, determining a first power amount which is the smallest out of acquired power amounts, and adjusting a power transmission direction to be a direction in which the power received by the power receptor which has received the first power amount is maximum. Each of the plurality of power transmitters are caused to transmit power in the adjusted power transmission direction and leaked power amounts for leaked power, which is received by the power receptors that are the targets for power transmission of other power transmitters, are acquired as leaked power amounts to the power transmitters for which the targets for power transmission are the power receptors which receive the leaked power.

Wireless power feeding method and wireless power feeding device

A pressed-contact type semiconductor device includes a power semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, lead frames which face the first electrode and the second electrode of the power semiconductor element respectively, and a clip which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames, wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.

Pressed-contact type semiconductor device and method for manufacturing the same

A semiconductor device which can reduce a heat stress to a solder layer while suppressing an increase of thermal resistance is provided. A semiconductor device includes a semiconductor element, a solder layer which is arranged on at least one surface of the semiconductor element and a lead frame which is arranged on the solder layer so that a porous nickel plating part is sandwiched between the lead frame and the solder layer. Compared with a case that the semiconductor element and the lead frame are jointed by a solder directly, an increased part of a thermal resistance of the solder junction is held down only to a part of the porous nickel plating part and a thermal resistance applied to the solder layer can be reduced.

Semiconductor device having a porous nickel plating part

Provided is a layered electronic circuit device capable of realizing high-density/high-function mounting, easily inspecting and repairing the respective constituent elements, and improving the electronic connection characteristic. The layered electronic circuit device includes a first circuit substrate () and a second circuit substrate () which are arranged in parallel such that their substrate surfaces are opposed to each other. The peripheral portion of the first circuit substrate () and the peripheral portion of the second circuit substrate () are connected to each other by connection members (to) having a wiring member () and a thermal hardening anisotropic conductive sheet (), thereby performing electric connection.

Layered electronic circuit device

Growing community of inventors

Shiga, Japan

Kohichi Tanda