Kohei Taniguchi

Yoshinobu Ozaki

Tatsuya Yahata

Shintaro Hashimoto

Kei Itagaki

A semiconductor device according to the present disclosure has a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip, in which the support piece contains a cured product of a thermosetting resin composition, or includes a layer containing a cured product of a thermosetting resin composition, and a resin layer or a metal layer.

Semiconductor device having dolmen structure and manufacturing method therefor, and support piece formation laminate film and manufacturing method therefor

A support piece formation laminate film according to the present disclosure includes a base material film, a pressure-sensitive adhesive layer, and a support piece formation film, in this order, in which the support piece formation film has a multi-layer structure including at least a metal layer. The support piece formation laminate film is applied to a manufacturing process of a semiconductor device having a dolmen structure including a substrate, a first chip disposed on the substrate, a plurality of support pieces disposed around the first chip, on the substrate, and a second chip disposed to be supported by the plurality of support pieces and to cover the first chip.

One aspect of the present disclosure is a manufacturing method for a support piece used in the formation of a dolmen structure in a semiconductor device, including processes of: (A) preparing a laminate film including a base material film, an adhesive layer, and a support piece formation film, for example, including a thermosetting resin layer, in this order; and (B) forming support pieces on a surface of the adhesive layer by singulating the support piece formation film, in which the process (B) includes a process of forming a cut in the support piece formation film partway in a thickness direction, and a process of singulating the support piece formation film in a cooled state by expansion, in this order.

Growing community of inventors

Tokyo, Japan

Kohei Taniguchi