Kabushiki Kaisha Kobe Seiko Sho

Other

Sharp Kabushiki Kaisha Corporation

Kobe Steel, Ltd.

Ulvac, Inc.

Kohei Suzuki

Takao Fujikawa

Takashi Kinoshita

Nobuyuki Kawakami

Yoshito Fukumoto

Takeshi Nogami

Koichi Ikeda

Yutaka Narukawa

Naoki Komai

Makoto Kadoguchi

Takuya Masui

Toshihisa Nozawa

Koji Kobashi

Kenichi Inoue

Koichi Miyata

Katsuhiro Uehara

Itaru Masuoka

Tomoyasu Kondou

Yasushi Mizusawa

Yoji Taguchi

A wiring film, which can be formed into wiring for ULSI semiconductor circuits, is formed by first forming holes in an insulating film on a substrate; then depositing a metallic material of copper, copper alloy, silver or silver alloy into the holes under an atmosphere including hydrogen; and finally annealing the deposited metallic material. The metallic material can be deposited by a sputtering process in which the atmosphere includes an inert gas in addition to the hydrogen. Hydrogen doped in the metallic material during the sputtering process promotes diffusion of atoms in the metallic material. The diffusion eliminates voids in the deposited metallic material.

Method of forming a wiring film by applying high temperature/high pressure

A method of forming a buried wiring comprising the steps of: (A) forming a wiring and a first insulating layer filled between the wirings on a substratum, (B) immersing the first insulating layer in a fluid which can dissolve the first insulating layer, to dissolve the first insulating layer into the fluid, (C) substituting, for the fluid, a raw material solution containing a raw material for forming a second insulating layer, without bringing the wiring into contact with a gas, and (D) filling a second insulating layer formed by gelation in the raw material solution at least between the wirings, and then, drying off the raw material solution, thereby to form the second insulating layer at least between the wirings.

Method of forming buried wiring

Method of forming buried wiring, and apparatus for processing substratum

Method of forming interconnect film

A method for making an aerogel film includes the steps of performing a gelation reaction of a metal alkoxide on a substrate to prepare a substrate with a wet-gel film, and converting the wet-gel film into an aerogel film by a supercritical or sub-critical drying process of the substrate with the wet-gel film, wherein the degree of gelation of the wet-gel film is controlled to be a predetermined value at the start of the supercritical or sub-critical drying process. Aerogel films having uniform qualities are produced by the supercritical or sub-critical drying process in one lot.

Method and apparatus for making aerogel film

A method of forming an intact wiring film by applying a filling treatment with a metal material with no pores to holes/trenches, the method comprising forming a barrier layer,to an insulation film,having holes/trenches,A, forming a seed layer by a PVD method on the surface of the barrier layer and laminating a wiring film,A by a electrolytic plating method and heat treating the same under a high temperature/high pressure gas atmosphere.

Method of forming a wiring film

The present invention provides a method for processing a substrate in which crystal defects occurring according to ion implantation can be prevented from being integrated to form defects such as dislocation or large vacancies in the manufacture of a SIMOX substrate by implanting oxygen atom to a Si base by ion implantation and reacting it with Si to form a buried oxide film. The annealing after ion implantation is performed under a gas atmosphere pressurized to, for example, about 100 MPa. In the pressurized state, a structure having a smaller volume is thermodynamically more stable, and a behavior as increases crystal distortion is arrested in the annealing. Thus, crystal defects can be laid in uniformly dispersed state, vacancies can be also extinguished, and a Si base of good quality suitable for manufacture of ULSI in which defects such as dislocation are reduced can be provided.

Method for processing substrate

A method for microfabricating diamond includes the steps of: forming a resist layer composed of a ladder silicone spin-on glass material on the surface of diamond; performing lithography, in which the resist layer is irradiated with an electron beam or an ion beam in a given pattern; developing the resist layer to form the given pattern; and etching diamond by an ECR plasma etching method or a high-frequency plasma etching method.

Method for microfabricating diamond

A dynamic random access memory has a plurality of memory cells, each cell is defined by a substrate made of semiconductor material, a capacitor for storing data, a first transistor connected to one side of the capacitor. The first transistor is formed of a thin film transistor, and a second transistor of the memory cell is connected to the other side of the capacitor. By this arrangement, the size of each memory cell is reduced.

Memory cell for dynamic random access memory

Growing community of inventors

Hyogo, Japan

Kohei Suzuki