Mitsubishi Electric Corporation

Kohei Sako

Tetsuo Takahashi

Hidenori Fujii

Kakeru Otsuka

Hirofumi Oki

A predetermined relational expression holds where a first distance along the in-plane direction from a channel of the first semiconductor layer to a third semiconductor layer that is the other of the collector layer and the cathode layer is designated as W, a second distance from the channel of the first semiconductor layer to the second semiconductor layer is designated as S, and a diffusion coefficient and a lifetime of a part of the semiconductor substrate between the channel of the first semiconductor layer and the third semiconductor layer are designated as D and &#x3c4;, respectively.

Semiconductor device including insulated gate bipolar transistor, diode, and current sense regions

A semiconductor device includes an IGBT region and a diode region provided to be adjacent to each other in a semiconductor substrate further includes: a boundary trench having, in a position in which the IGBT region and the diode region are adjacent to each other in plan view, a bottom surface positioned in a drift layer to be deeper than an active trench or a dummy trench, and one side wall and another side wall that face each other; and a boundary trench gate electrode, which faces a base layer, an anode layer, and the drift layer via a boundary trench insulating film and is provided from the one side wall to the other side wall of the boundary trench across a region that faces the drift layer in the boundary trench.

Growing community of inventors

Tokyo, Japan

Kohei Sako