Advanced Material Technologies, Inc.

Kohei Okudaira

Yuuji Honda

Kouji Abe

Toshiyuki Watanabe

Hiroyasu Sekino

Masafumi Tanaka

A plasma CVD device includes a chamber (), an anode (), a cathode (), a holding portion which holds a substrate to be deposited () a plasma wall () an anti-adhesion member () which is arranged between a first gap () between the anode and the plasma wall and a first inner surface () of the chamber and a pedestal () which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap () between the anode and the anti-adhesion member, a third gap () between the back surface of the anode and the pedestal, a fourth gap () between the plasma wall and the anti-adhesion member and a fifth gap () between the anti-adhesion member and the pedestal is equal to or less than 4 mm.

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Chiba, Japan

Kohei Okudaira