Canon Kabushiki Kaisha

Kohei Okamoto

Koichi Fukuda

Wataru Kubo

Hirokatsu Miyata

Takashi Noma

Shunichi Wakashima

Atsushi Komoto

Hajime Ikeda

Fumihiro Inui

Junji Iwata

Koji Yano

Ryo Kuroda

Tatsuro Uchida

Yasuhiro Nagatomo

Mamoru Uchida

Sho Suzuki

Hideomi Kumano

Yuichiro Hori

Tomoyuki Tezuka

Kazuya Igarashi

Koki Takami

Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

Photoelectric conversion device, imaging system, and mobile apparatus

A line-of-sight detection apparatus includes an acquisition unit configured to acquire an eyeball image, an irradiation unit configured to irradiate an eyeball with light in an infrared wavelength band, forming a plurality of point-shaped optical images on the eyeball image, and a calculation unit configured to calculate line-of-sight information based on the eyeball image and the plurality of point-shaped optical images, wherein the irradiation unit includes at least one single light source configured to emit the light in the infrared wavelength band, and a dividing element configured to divide the light emitted from the single light source into a plurality of beams of the emitted light to form the plurality of point-shaped optical images.

Line-of-sight detection apparatus and image capturing apparatus

In an image sensor having a plurality of pixels including focus detection pixels that outputs signals from which a pair of focus detection signals having parallax can be obtained based on light flux passing through different pupil regions of an imaging optical system, each pixel comprises: at least one photoelectric conversion unit; and a microlens optical system provided on a side on which light is incident with respect to the photoelectric conversion unit, wherein a shape of a principal curved surface of the microlens optical system is such that a first curvature of the microlens optical system at a first distance from an optical axis of the microlens optical system is larger than a second curvature of the microlens optical system at a second distance which is farther from the optical axis of the microlens optical system than the first distance.

Image sensor and image capturing apparatus

An apparatus includes pixels on a substrate. Each pixel includes a first portion, a second, and a microlens. The substrate has a first surface on an incidence side and a second surface opposite to the first surface, and includes an inter-pixel portion isolating adjacent pixels from each other, and an intra-pixel portion isolating the first and second portions from each other. The inter-pixel portion includes a first region located adjacently to the first surface, and a second region located adjacently to the second surface. The intra-pixel portion includes a third region located adjacently to the first surface, and a fourth region located adjacently to the second surface. The first and third regions are shifted with respect to the second and fourth regions, respectively, in an identical direction that is a direction orthogonal to a longitudinal direction of the intra-pixel portion in plan view from the first surface.

Apparatus, system, and moving body

An image sensor comprising a plurality of microlenses, and a pixel array having, with respect to each of the microlenses, a pair of first regions formed at a first depth from a surface on which light is incident, a pair of second regions formed at a second depth deeper than the first depth, and a plurality of connecting regions that connects the pair of first regions and the pair of second regions, respectively. A direction of arranging the pair of second regions corresponding to each microlens is a first direction, and a direction of arranging the pair of first regions is either the first direction or a second direction which is orthogonal to the first direction.

An imaging device suitable for focus detection of a pupil division phase difference method includes: a light receiving unit provided on a first surface side of a semiconductor substrate and having a plurality of pixels arranged in a two-dimensional form; and a read-out circuit provided on a second surface side of the semiconductor substrate opposite to the first surface side and configured to read signals from the pixels. Each of pixels has at least two photoelectric conversion elements and a separation region which is a region between the two photoelectric conversion elements and a separation region control electrode arranged on the second surface side of the separation region and configured to control a potential of the separation region.

Imaging device and imaging apparatus

An image sensor comprising pixels each includes, an photoelectric conversion unit, a first inner-layer lens, a second inner-layer lens, and an on-chip microlens. A light-shielding wall around the second inner-layer lens is provided between adjacent pixels. A first positional difference between center positions of the first inner-layer lens and the photoelectric conversion unit, a second positional difference between center positions of the second inner-layer lens and the photoelectric conversion unit, and a third positional difference between center positions of the on-chip microlens and the photoelectric conversion unit satisfy: the second positional difference&#x3c;the first positional difference&#x3c;the third positional difference.

Image sensor and image capture apparatus

An image sensor comprising: a plurality of pixels that are each provided with a plurality of photoelectric conversion portions and a microlens, and that are configured to read out signals that have been subjected to pupil division, the plurality of pixels each being provided with a light guide that is located between the microlens and the plurality of photoelectric conversion portions, wherein a maximum width of a shape of a cross section, the cross section being parallel with an image sensing surface of the image sensor, of the light guide in an arrangement direction in which the plurality of photoelectric conversion portions that form a pair are arranged is greater than a maximum width of the shape of the cross section in an direction that is orthogonal to the arrangement direction.

In an image sensor comprising a plurality of imaging pixels, each pixel includes: a microlens for guiding incident light into a corresponding one of the plurality of imaging pixels, a color filter transmitting light of a predetermined wavelength band, a first photoelectric conversion unit for photoelectrically converting the light transmitted through the color filter, and a second photoelectric conversion unit provided below the first photoelectric conversion unit with a predetermined space therebetween. The first photoelectric conversion unit is provided with a first electrode provided to acquire a first signal from a first region of the first photoelectric conversion unit and a second electrode provided to acquire a second signal from a second region different from the first region. A light transmittance of the first photoelectric conversion unit with respect to the predetermined wavelength band is higher than 50%.

An image sensor includes a plurality of pixels. At least a pixel of the plurality of pixels includes a plurality of photoelectric converters arranged in a semiconductor substrate and a light waveguide provided for the plurality of photoelectric converters. The light waveguide includes a main waveguide surrounded by an insulation film so as to pass light entering the plurality of photoelectric converters, and a plurality of sub waveguides each arranged between the main waveguide and a corresponding photoelectric converter of the plurality of photoelectric converters. The plurality of sub waveguides are separated from each other by a separator including an electrically conductive member.

Image sensor, method of manufacturing the same, and camera with pixel including light waveguide and insulation film

A X-ray waveguide includes a core for guiding X-rays having a wavelength band in which the real part of refractive index of material is smaller than 1 and a cladding for confining the X-rays in the core. The core has a one-dimensional periodic structure in which a plurality of layers respectively formed of inorganic materials having different real parts of refractive index are periodically laminated. The core and the cladding are configured so that a critical angle for total reflection for the X-rays at an interface between the core and the cladding is larger than a Bragg angle due to a periodicity of the one-dimensional periodic structure. A critical angle for total reflection for the X-rays at an interface between layers in the one-dimensional periodic structure is smaller than the Bragg angle due to the periodicity of the one-dimensional periodic structure.

X-ray waveguide

An X-ray waveguide showing a small propagation loss and having a waveguide mode with its phase controlled is provided. The X-ray waveguide including: a core for guiding an X-ray in a wavelength band that a real part of the refractive index of a material is 1 or less; and a cladding for confining the X-ray in the core, in which: the X-ray is confined in the core by total reflection at a interface between the core and the cladding; in the core multiple materials having different real parts of the refractive index are periodically arranged; and a waveguide mode of the X-ray waveguide is such that the number of antinodes or nodes of an electric field intensity distribution or a magnetic field intensity distribution of the X-ray coincides with the number of periods of the periodic structure in a direction perpendicular to a waveguiding direction of the X-ray in the core.

To provide an X-ray waveguide which: shows a small propagation loss of an X-ray; has a waveguide mode with its phase controlled; does not deteriorate owing to oxidation; and can be easily produced, an X-ray waveguide, including: a core for guiding an X-ray in such a wavelength band that a real part of the refractive index of a material is 1 or less; and a cladding for confining the X-ray in the core, in which: the core has a one-dimensional periodic structure containing multiple materials having different real parts of the refractive index; the multiple materials include one of an organic material, a gas, and a vacuum, and an inorganic material; and the core and the cladding are formed so that the critical angle for total reflection at an interface between the core and the cladding is larger than a Bragg angle resulting from a periodicity of the one-dimensional periodic structure, is realized.

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Yokohama, Japan

Kohei Okamoto