Ushio Denki Kabushiki Kaisha

Konica Minolta, Inc.

Hitachi Maxell, Limited

Kohei Miyoshi

Masashi Tsukihara

Nobuyuki Kimura

Manabu Kawaguchi

Takahiro Inoue

Makoto Sumi

Chohei Ono

Masayuki Fukui

Koichi Naniwae

Tomonari Asai

Takanori Oshima

Kei Adachi

Hiroshi Namekawa

Takayuki Narita

Toru Sugiyama

Sei Mitsui

A nitride semiconductor light-emitting device having high luminous efficiency is provided. A nitride semiconductor light-emitting device is provided with a nitride semiconductor substrate including a main surface having an off angle of 0.4&#xb0; or larger with respect to a (0001) plane, a first semiconductor layer formed of an n-type or p-type nitride semiconductor formed on the main surface, a second semiconductor layer formed of a nitride semiconductor having In composition of 2% or higher formed on the first semiconductor layer, an active layer formed on the second semiconductor layer including a well layer formed of a nitride semiconductor having In composition higher than that of the second semiconductor layer and a barrier layer formed of a nitride semiconductor stacked therein, and a third semiconductor layer formed on the active layer having a conductivity type different from that of the first semiconductor layer.

Nitride semiconductor light-emitting device

A portable radiographic imaging apparatus includes a sensor and a case that houses sensor panel. Radiation detector elements are arrayed two-dimensionally in the sensor panel. The case comprises a corner where two side walls are adjacent. The side walls are made of a continuous fiber reinforced resin that comprises one or more fiber layers oriented in a predetermined direction. The fiber layers are oriented in a direction from one to the other of the adjacent side walls in the corner. A breakpoint where the fiber layers are discontinuous over an entire thickness in a wall thickness direction is not present in an area of at least one of the corners.

Portable radiographic imaging apparatus

A portable radiography device includes a housing with a front plate, a back plate, and a sensor panel accommodated therein. Electronic components disposed on the back plate side of the sensor panel are used to read a charge generated by the radiation detection element as a signal value and generate heat when reading the signal value. A heat conduction member is pressed by the back plate and the electronic components resulting in close contact of the heat conduction member with the electronic components and the back plate.

Portable radiation image capturing apparatus

A nitride semiconductor light-emitting element having a main emission wavelength of 520 nm or more, including a sapphire substrate, and a semiconductor layer formed on an upper layer of the sapphire substrate. The semiconductor layer includes: a first semiconductor layer formed on a surface of the sapphire substrate; a second semiconductor layer formed on an upper layer of a first semiconductor layer, and doped with n-type or p-type impurities; an active layer formed on an upper layer of the second semiconductor; and a third semiconductor layer formed on an upper layer of the active layer, and having a different conductivity type than the second semiconductor layer. The thickness X of the sapphire substrate and the thickness Y of the semiconductor layer satisfy the relationship 0.06&#x2264;Y/X&#x2264;0.12.

Nitride semiconductor light-emitting element

X-ray imaging device for medical treatment

An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of AlGaInN (0&#x3c;x1&#x3c;1, 0&#x3c;y1&#x3c;1, 0&#x3c;z1&#x3c;1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of InGaN (0&#x3c;x2&#x3c;1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of AlGaInN (0&#x3c;x3&#x3c;1, 0&#x3c;y3&#x3c;1, 0&#x2264;z3&#x3c;1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

Light emitting element

Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlGaN (0&#x3c;n&#x2266;1), and has a C concentration of 1&#xd7;10/cmor less.

Nitride semiconductor light emitting element

Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InGaN (0&#x3c;x&#x2266;0.05) and a fourth semiconductor layer constituted of n-AlGaInN (0&#x3c;y1&#x3c;1, 0&#x3c;y2&#x3c;1, 0&#x2266;y3&#x2266;0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.

LED element

To provide a light source device and a projection-type image display device which can improve light emitting efficiency and service life of a fluorescent material. The light source device includes: an excitation light source for emitting excitation light; a fluorescent material for emitting fluorescent light when excited by the excitation light; and an optical member for directing the excitation light to the fluorescent material. The optical member has a curvature that is set such that a light-condensing position of the excitation light is positioned on a light-emitting side of the excitation light relative to the fluorescent material. An optical fiber is disposed between the excitation light source and the light source, so that the excitation light from the excitation light source may be made incident on the optical fiber.

Light source device and projection-type image display device

Disclosed is a radiation image capturing apparatus including the following. A sensor panel includes a plurality of radiation detecting elements aligned two-dimensionally. A case stores the sensor panel. A ventilation hole is provided in the case. A ventilation filter is provided in the ventilation hole and prevents infiltration of liquid into the case. Air flows in and out of the case through the ventilation hole and a thickness of the case is maintained at a predetermined thickness when outside pressure changes.

Radiation image capturing apparatus

The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and includes a current supply part; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of the semiconductor layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.

Semiconductor light-emitting element and method for producing the same

A light source device includes an excitation light source that generates excitation light, a phosphor wheel including a phosphor segment that generates fluorescent light by excitation of the excitation light, and a mirror that guides the excitation light from the excitation light source to the phosphor wheel and emits the fluorescent light from the phosphor wheel as illumination light. The phosphor wheel further includes an anisotropic diffusion and reflection unit that diffuses and reflects incident excitation light such that an optical path for the incident excitation light and an optical path for the diffused excitation light after incidence of the excitation light are not overlapped. The mirror includes a first region that reflects the excitation light and transmits the fluorescent light and a second region that transmits the fluorescent light and the diffused excitation light which the anisotropic diffusion and reflection unit has diffused and reflected.

Light source device

There is provided a light source device which, when a light source which excites a phosphor with excitation light and emits fluorescent light is used, reduces incidence of the excitation light to an excitation light source to increase an output of the excitation light and extend the life. The light source device is provided with a plurality of excitation light sources emitting excitation light and a phosphor changing excitation light to fluorescent light, and the excitation light sources are arranged so that each excitation light emitted from each of the excitation light sources asymmetrically enters an excitation light irradiation region on a phosphor. A mirror is installed on an optical path of unconverted excitation light reflected from the phosphor and returns the unconverted excitation light to the phosphor side, whereby the unconverted excitation light can be utilized as excitation light again.

Provided is an LED element which achieves high light extraction efficiency even at low operating voltages and which can be produced using a simple process. The LED element has a first semiconductor layer made of a p-type nitride semiconductor, a light-emitting layer made of a nitride semiconductor formed on the upper layer of the first semiconductor layer, a second semiconductor layer made of an n-type nitride semiconductor formed on the upper layer of the light-emitting layer, and a transparent electrode formed on the whole surface of the second semiconductor layer. The second semiconductor layer in at least a region that is in contact with the transparent electrode is made of AlGaN (0&#x3c;n&#x3c;1) and has an n-type impurity concentration larger than 1&#xd7;10/cm.

Growing community of inventors

Himeji, Japan

Kohei Miyoshi