Fuji Electric Co., Ltd.

Nissan Motor Company Limited

Sanken Electric Co., Ltd.

Sumitomo Metal Mining Company, Ltd.

Kohei Matsui

Satoshi Tanimoto

Shinji Sato

Yoshinori Murakami

Yusuke Zushi

Takashi Iseki

Hidekazu Tanisawa

Masamitsu Takizawa

Yoshio Mori

Masato Takamori

Nobuyuki Kobayashi

Yu Fukushima

So Nakamichi

In a power conversion device, a distance between an output terminal of a first switching module and a cathode terminal of a first diode module in a first direction is arranged to be substantially equal to a distance between an output terminal of a second switching module and an anode terminal of a second diode module in the first direction.

Power conversion device

In each of a plurality of semiconductor element groups of a power converter, a second semiconductor switching element and a third semiconductor switching element are shifted from each other in a second direction such that at least a portion of fins with which the second semiconductor switching element overlaps as viewed in a direction orthogonal to surfaces of coolers is different from fins with which the third semiconductor switching element overlaps as viewed in the direction orthogonal to the surfaces of the coolers.

Power converter and power converter for railroad vehicle

In a heat insulating load jigof the present invention, a solder materialhaving a melting point or a solidus temperature in a range between a thermal resistance temperature of a semiconductor chipand a temperature 100&#xb0; C. below the thermal resistance temperature is interposed between a circuit boardand the semiconductor chip; a heat insulating bodyis placed on an upper side of the semiconductor chipin this state; a metal weightis disposed on the heat insulating body; and load is applied to the semiconductor chipwhile the solder materialis melted and solidified.

Method for manufacturing semiconductor device, heat insulating load jig, and method for setting up heat insulating load jig

An inverter includes: an inverter circuit including: a power semiconductor module; and an inverter circuit module including a passive component; a cooler including a cooler surface to which the power semiconductor module is joined; an inverter case sealing the inverter circuit with the cooler surface of the cooler; and a sealed heat insulating layer being formed on the cooler surface of the cooler and having a thickness that is equal to or less than a maximum convection suppressing distance.

Inverter

A semiconductor device according to the present invention, having an Au-based solder layer () sandwiched between a semiconductor element () and a Cu substrate () made mainly of Cu, in which the semiconductor device includes: a dense metal film () which is arranged between the Cu substrate () and the Au-based solder layer (), and has fine slits () patterned to have a predetermined shape in a plan view; and fine structures () with dumbbell-like cross section, which have Cu and Au as main elements, and are each buried in the Cu substrate (), the Au-based solder layer (), and the fine slits () of the dense metal film ().

Au-based solder die attachment semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.

Method for manufacturing semiconductor device, and semiconductor device

A semiconductor module has a pair of semiconductor devices, a heat sink, a first electrode, an output electrode and a second electrode. The semiconductor devices are connected in series with each other and have first terminals that are electrically connected to a first power system and a second terminal that is electrically connected to a second power system. The first electrode is electrically connected both to one of the first terminal and to an electrode of one of the semiconductor devices. The output electrode is electrically connected both to the second terminal and to an electrode of the other of the semiconductor device. The second electrode is electrically connected to the other of the first terminals. The second electrode is connected to the heat sink via a first insulating member. The output electrode is connected to the second electrode via a second insulating member.

Semiconductor module

A switching circuit includes: a first switching element (Q); a resistor () inserted between a control electrode (G) of the first switching element (Q) and a control circuit () switching the first switching element (Q); and a first capacitor () and a second switching element () connected in series between the control electrode (G) of the first switching element (Q) and a low potential-side electrode (S) of the first switching element (Q). A high potential-side electrode of the second switching element () is connected to the control electrode (G) of the first switching element (Q). An electrode of the first capacitor () is connected to the low potential-side electrode (S) of the first switching element (Q). A control electrode of the second switching element () is connected to an electrode of the resistor () connected to the control circuit ().

Growing community of inventors

Hino, Japan

Kohei Matsui