Tosoh Corporation

Sagami Chemical Research Institute

Kohei Iwanaga

Ken-ichi Tada

Toshiki Yamamoto

Atsushi Maniwa

Noriaki Oshima

Hirokazu Chiba

Kazuyoshi Arai

Tomoyuki Kinoshita

Taishi Furukawa

Kazuhisa Kawano

Yoshinori Harada

Toru Tsuyoshi

Masanori Kohgo

Hiroyuki Oike

Tadahiro Yotsuya

Masanori Abe

Sachio Asano

Takahiro Kawabata

Satori Hirai

Shuji Takato

Hidehiko Misaki

Naoyuki Koiso

Hiroya Honda

Kenichi Tada

Taichi Arakawa

Fumiaki Yoshitomi

Ryo Nakagame

Keisuke Araki

Ken-Ichi Tada

To provide europium complexes having high photostability. A europium complex expressed with the following formula (A): {wherein, Rand Rare independently a cyclic alkyl group with 3 to 10 carbons, respectively, and Ris a cyclic alkyl group with 3 to 10 carbons or a phenyl group expressed with the following formula (B): (wherein, X, X, A, Xand Xindependently represent a hydrogen atom; a fluorine atom; an alkyl group with 1 to 3 carbon(s); an alkyloxy group with 1 to 3 carbon(s); an aryloxy group with 6 to 10 carbons; a fluoroalkyl group with 1 to 3 carbon(s); a fluoroalkyloxy group with 1 to 3 carbon(s); or a phenyl group that may be substituted with a fluorine atom, an alkyl group with 1 to 3 carbon(s), an alkyloxy group with 1 to 3 carbon(s), a fluoroalkyl group with 1 to 3 carbon(s), a fluoroalkyloxy group with 1 to 3 carbon(s), a fluorophenyl group, a hydroxyl group or a cyano group, respectively); (wherein, Xrepresents a hydrogen atom, an alkyl group with 1 to 3 carbon(s), an alkyloxy group with 1 to 3 carbon(s), a fluoroalkyl group with 1 to 3 carbon(s), a fluoroalkyloxy group with 1 to 3 carbon(s), a naphthyl group that may be substituted with a fluorine atom, a pyridyl group that may be substituted with a fluorine atom, or a phenyl group that is expressed with a formula (C): [wherein, Z, Zand Zindependently represent a hydrogen atom, a fluorine atom, an alkyl group with 1 to 3 carbon(s), an alkyloxy group with 1 to 3 carbon(s), a fluoroalkyl group with 1 to 3 carbon(s), a fluoroalkyloxy group with 1 to 3 carbon(s), a phenyl group that may be substituted with a fluorine atom, a hydroxyl group or a cyano group; Zand Zindependently represent a hydrogen atom or a fluorine atom, respectively], provided, however, that a case where R, Rand Rare all a phenyl group is excluded), respectively; Rrepresents a hydrogen atom, a deuterium atom or a fluorine atom; Wand Windependently represent an alkyl group with 1 to 6 carbon(s), a fluoroalkyl group with 1 to 6 carbon(s), a phenyl group, a 2-thienyl group or a 3-thienyl group; and 'n' represents an integer of 1 to 3}.

Europium complex

Provided are: an anode active material for a lithium ion secondary battery with which high initial efficiency and battery capacity can be maintained and excellent cycling characteristics are achieved; and a method for producing such an active material. The anode active material for a lithium ion secondary battery, the active material comprising a Si compound and a carbonaceous material or a carbonaceous material and graphite, is obtained by a method comprising the steps of:

Composite active material for lithium ion secondary batteries and method for producing same

An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

Film-forming material, group IV metal oxide film and vinylenediamide complex

The present invention is to provide a ruthenium complex represented by formula (1a), (2), (3), etc., which is useful for producing a ruthenium-containing thin film both under the conditions using an oxidizing gas as the reaction gas and under the conditions using a reducing gas as the reaction gas: wherein Rto R, R, Rand Rto Rrepresents an alkyl group having a carbon number of 1 to 6, etc., and n represents an integer of 0 to 2.

Ruthenium complex, method for producing same, and method for producing ruthenium-containing thin film

This invention aims at providing a material from which a silicon-containing thin film can be efficiently produced at a low temperature of 500&#xb0; C. or less without using plasma or the like. The invention relates to produce a hydrosilane derivative represented by the general formula (1') by reacting a chlorosilane derivative (3) with a compound MZ (4) and produce the silicon-containing thin film by using the hydrosilane derivative as the material.  In the formulae, R, Rare defined in the specification.

Hydrosilane derivative, method for producing same, and method for producing silicon-containing thin film

A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein Rand Reach independently represent an alkyl group having 1-16 carbon atoms; Rand Reach independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and Rrepresents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

Titanium complex, processes for producing the same, titanium-containing thin film, and process for producing the same

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Kanagawa, Japan

Kohei Iwanaga