Tdk Corporation

Kohei Honma

Hiraku Hirabayashi

Kazuya Watanabe

Keisuke Uchida

Masaki Nagata

Satoshi Miura

Takayasu Kanaya

Minoru Ota

Hideyuki Ukita

Hidekazu Kojima

Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.

Magnetic field detection device

A magnetic field detection device, containing a) a first soft magnetic body containing a1) a first plate including a first surface having a first outer edge; and a2) a first protrusion disposed directly or indirectly on the first surface of the first plate at a first arrangement position set back from the first outer edge, the first protrusion including a first tip on an opposite side to the first surface; and b) a magnetic detector provided in a vicinity of the first tip, wherein the magnetic detector has a magnetic sensing direction along the first surface, and the first protrusion is capable of bending a direction of a first magnetic flux, which comes into the first plate, along the first surface.

Provided is a magnetic field detection device that includes a first soft magnetic body and a magnetic detector. The first soft magnetic body includes a first plate and a first protrusion. The first plate includes a first surface including a first outer edge. The first protrusion is provided at a first arrangement position in the first surface and includes a first tip on opposite side to the first surface. The first arrangement position is set back from the first outer edge. The magnetic detector is provided in the vicinity of the first tip.

A magnetic field detection device includes a first soft magnetic body, a second soft magnetic body, and a magnetism detection element. The first soft magnetic body extends to have a first length in a first direction, and has a first width, smaller than the first length, in a second direction. The second direction is substantially orthogonal to the first direction. The second soft magnetic body is disposed to be spaced apart from and face the first soft magnetic body in the first direction, extends to have a second length in the first direction, and has a second width, smaller than the second length, in the second direction. The magnetism detection element is disposed, in the first direction, between the first and second soft magnetic bodies, and extends to have a third length in the first direction and a third width, larger than the third length, in the second direction.

A magnetoresistive element has a magnetization free layer whose magnetization direction changes in an external magnetic field; a magnetization pinned layer whose magnetization direction is pinned in the external magnetic field; and a barrier layer that is positioned between the magnetization free layer and the magnetization pinned layer and that exhibits a magnetoresistive effect. The barrier layer is an oxide of an alloy that includes Mg and Al, and the barrier layer includes a crystalline region and a non-crystalline region.

Magnetoresistive element, manufacturing method thereof and magnetic sensor

A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2&#x2212;G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280&#xb0; C. of the first oxide and the second oxide, respectively.

Growing community of inventors

Tokyo, Japan

Kohei Honma