Fujifilm Corporation

Japan Technological Research Association of Artificial Photosynthetic Chemical Process

Kohei Higashi

Atsushi Tanaka

Maki Nangu

Kenichi Umeda

Yasunori Yonekuta

Naoya Hatakeyama

Yoichi Nishida

Tsutomu Yoshimura

Ken-Ichi Umeda

Hiroyuki Hirai

Katsuhiro Kohda

Hiroshi Sunagawa

Hideki Takakuwa

Naoki Tsukamoto

Fumihiro Yoshino

Takumi Tanaka

Takamitsu Tomiga

Naotoshi Sato

Masataka Satou

Yuma Kurumisawa

Takashi Bannai

A method for producing a composition, the method being for producing a composition using a stirring device provided with a stirring tank and a stirrer, includes a mixing step of charging a resin, an acid generator, and a solvent into the stirring tank, and a stirring step of stirring the mixture accommodated in the stirring tank, using the stirrer, in which a ratio c of a content of the acid generator to a total mass of the mixture is 0.3% to 2.5% by mass, the stirrer is provided with a rotatable stirring shaft, a plurality of support parts attached to the stirring shaft, and a plurality of stirring elements attached to each of end parts of the plurality of support parts, the shape and the arrangement of the stirring elements are specified, and the positions of the plurality of stirring elements are specified so as to satisfy a specific Expression (1).

Method for producing radiation-sensitive resin composition and pattern forming method

Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device

An actinic ray-sensitive or radiation-sensitive resin composition for forming a pattern used as a mask in an ion implanting, including a resin including a repeating unit having an acid-decomposable group, a photoacid generator, and an additive having a melting point or glass transition temperature of lower than 25&#xb0; C. and a molecular weight of 180 or more, in which a content of the additive is 1% by mass or more with respect to a total solid content in the composition.

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing solid-state imaging element

A gas production apparatus is provided which includes: a module including a plurality of PN junctions connected in series to one another, each being formed of an inorganic semiconductor and having a light receiving surface; two gas generators that are provided at open ends of PN junctions at both extremities of the module, respectively, on a side of the light receiving surface; an electrolysis chamber which contains an aqueous electrolytic solution in contact with the two gas generators and contains gases generated by the two gas generators; and a diaphragm which is ion-permeable but gas-impermeable, and partitions the electrolysis chamber into two regions including the two gas generators, respectively, and containing hydrogen and oxygen, respectively.

Gas production apparatus

According to the invention, there are provided a conductive film which has a mesh-like metal layer composed of metal thin wires and in which visual recognition of the metal thin wires is suppressed and the metal layer has excellent conductive characteristics, a touch panel sensor, and a touch panel. A conductive film according to the invention includes a substrate; a patterned to-be-plated layer which is disposed on the substrate in a mesh pattern and has a functional group interacting with a plating catalyst or a precursor thereof; and a mesh-like metal layer which is disposed on the patterned to-be-plated layer and has a plurality of metal thin wires intersecting each other, an average thickness of the patterned to-be-plated layer is 0.05 to 100 &#x3bc;m, an average thickness of the metal layer is 0.05 to 0.5 &#x3bc;m, and an average intersection growing rate at an intersection of metal thin wires of the mesh of the metal layer is 1.6 or less.

Conductive film, touch panel sensor, and touch panel

Provided are a water decomposition apparatus and a water decomposition method that can maintain high gas generation efficiency even in an early stage of light irradiation and even in a case where time has elapsed and that can recover the gas generation amount of hydrogen gas or the like, can generate hydrogen gas or the like stably for a long time on an average, and can increase the integrated amount of generation of hydrogen for a long time, even in a case where time has elapsed and the gas generation amount of hydrogen gas or the like has decreased.

Water decomposition apparatus and water decomposition method

A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.

Semiconductor device, method for producing the same, sensor and electro-optical device

In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film

A method for producing an electrically-conductive inorganic coating includes depositing, on a substrate, a coating-precursor containing a plurality of inorganic particles and at least one kind of organic component by a liquid-phase method by using a material-liquid containing the inorganic particles and an organic solvent. The inorganic particles are coated with a dispersant binding to the surfaces of the inorganic particles by chemical bonds that can be broken by oxidation. Further, the method includes oxidizing the coating-precursor at a temperature exceeding 100&#xb0; C., and that is less than or equal to the pyrolysis initiation temperature of an organic component that has the highest pyrolysis initiation temperature among the at least one kind of organic component and less than or equal to the heat-resistance temperature of the substrate, thereby breaking the chemical bonds to eliminate the dispersant from the surfaces, and decomposing the at least one kind of organic component.

Electrically-conductive inorganic coating, method for producing the coating, circuit board, and semiconductor apparatus

A semiconductor device includes a substrate and a channel region which is formed above the substrate by printing, wherein a relationship L&#x2267;is satisfied where L is a channel length of the channel region and a is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as patterns that define the channel length L; and a relationship W&#x2267;is satisfied where W is a channel width of the channel region and b is a minimum dimension among pattern dimensions and inter-pattern dimensions in the same layer as a pattern that defines the channel width W.

Semiconductor device, manufacturing method of semiconductor device, and display device

During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 10&#x3a9;&#xb7;cm or more.

Method for producing semiconductor device

A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va&#x3e;4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.

Growing community of inventors

Ashigarakami-gun, Japan

Kohei Higashi