Tohoku University

Kohei Fujiwara

Atsushi Tsukazaki

A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of FeSn, where 0.5&#x2264;x&#x3c;0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.

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Miyagi, Japan

Kohei Fujiwara