Macom Technology Solutions Holdings, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies Wireless Ip, Pte. Ltd.

Kohei Fujii

Michael Louis Frank

Wayne Mack Struble

Walter H Nagy

Shamit Som

A symmetrical common gate direct current bias network for stacked field effect transmitter distributed high-power amplifier, related apparatus, and related method are provided. An apparatus includes a plurality of amplifier stages connected in parallel between an input port and an output port. The apparatus can also include a first common gate voltage generator operatively connected at a first side of the plurality of amplifier stages and a second common gate voltage generator operatively connected at a second side of the plurality of amplifier stages. The first common gate voltage generator can be operatively connected to the second common gate voltage generator in a symmetrical configuration.

Symmetrical common gate direct current bias network for stacked field effect transmitter distributed high-power amplifier, related apparatuses and related methods

Various aspects of integrated amplifiers, layouts for the integrated amplifiers, and packaged arrangements of the amplifiers are described. In one example, an amplifier includes an amplifier cell, and a biasing network coupled to the common gate transistor in the amplifier cell. The amplifier cell includes a common source transistor and a common gate transistor in a cascode arrangement, where at least one of the common source transistor and the common gate transistor comprises a field plate. Among other advantages, the amplifiers described herein can be biased with relatively high voltages and still operate like a single a common source transistor, without sacrificing reliability, performance, or requiring additional off-chip components, such as biasing networks of resistors and inductors.

High voltage stacked transistor amplifier

Examples of a package for a flange mount device are described. In one example, the package includes a thermally conductive base, a base substrate, and a lid having a cavity. The base substrate includes a through hole and radio frequency (RF) input, RF output, and bias traces that extend to a perimeter of the through hole. The lid includes a cavity and RF input coupling, RF output coupling, and bias coupling traces. A device can be secured to the thermally conductive base, and the lid can be secured to the thermally conductive base, with the base substrate secured between the lid and the thermally conductive base, coupling the traces of the base substrate to the traces of the lid. Other components, such as biasing, blocking, and bypassing components can be easily integrated into the package. Impedance matching and electromagnetic shielding components can also be easily integrated into the package.

Flange mount millimeter-wave package

An apparatus includes a first directional coupler, a second directional coupler, a first detector, and a second detector. A through port of the first directional coupler is coupled to a through port of the second directional coupler. An isolated port of the first directional coupler is coupled to an isolated port of the second directional coupler. A coupled port of the first directional coupler is coupled to the first detector. A coupled port of the second directional coupler is coupled to the second detector. A detected power signal is generated by combining an output of the first detector and an output of the second detector.

Compact dual diode RF power detector for integrated power amplifiers

An apparatus includes an input transformer, an amplifier and an output transformer. The input transformer may be on a substrate and configured to convert an input signal into a differential input signal. The input signal may be a radio-frequency signal. The amplifier may be on the substrate and configured to generate a differential output signal in response to the differential input signal. The amplifier may be a balanced and distributed amplifier. The output transformer may be on the substrate and configured to convert the differential output signal into an output signal. Each of the input transformer and the output transformer may be a three line coupled balun transformer with a variable bandpass bandwidth.

Balanced distributed power amplifier for monolithic microwave integrated circuit

An apparatus includes an input port, an output port, and a plurality of amplifier stages connected in parallel between the input port and the output port. Each of the amplifier stages comprises a common source field effect transistor (CSFET) and at least two common gate field effect transistors (CGFETs) coupled in series with a drain of the common source FET. At least one of the common gate field effect transistors of each stage includes a stabilizing network connected between drain and source diffusions.

N-stacked field effect transistor based traveling wave power amplifier for monolithic microwave integrated circuits

An amplifier having an operating frequency includes: an input port and an output port; three gain elements, each having an input terminal and an output terminal; an input matching network; and an output matching network. The input matching network includes: a first microstrip line which is connected to the input port and is an inductor at the operating frequency; a second microstrip line extending between the input terminals of the three gain elements; and a first split shunt capacitor connecting the first microstrip line to the second microstrip line. The output matching network includes: a third microstrip line which is connected to the output port and is an inductor at the operating frequency; a fourth microstrip line extending between the output terminals of the three gain elements; and a second split shunt capacitor connecting the third microstrip line to the fourth microstrip line.

Impedance matching arrangement for amplifier having split shunt capacitor and amplifier including the same

An up-conversion mixer includes a first and a second hybrid couplers and a first and a second traveling-wave mixers is disclosed. The first hybrid coupler receives an input intermediate frequency (IF) signal and produces a first IF signal (IF) and a second IF (IF) signal, the second IF signal being 180 degree off-phase compared to the first IF signal. The first traveling-wave mixer mixes the first IF signal (IF) and a first local oscillator (LO) signal to produces a first radio frequency signal (RF). The second traveling-wave mixer mixes the second IF signal (IF) and a second local oscillator signal (LO) to produces a second RF signal (RF). The second hybrid coupler to combines the first RF signal and the second RF signal to produce an output RF signal. The use of the traveling-wave mixers allow for a wide bandwidth operation of the up-conversion mixer.

Wideband up-conversion mixer

An image rejection mixer including a first and a second hybrid couplers and a first and a second traveling-wave mixers is disclosed. The first hybrid coupler divides an input radio frequency (RF) signal to a first RF signal and a second RF signal, the second RF signal being in quadrature to the first RF signal. The first traveling-wave mixer mixes the first RF signal and a local oscillator (LO) signal to produces a first intermediate frequency (IF) signal. The second traveling-wave mixer mixes the second RF signal and the local oscillator signal to produces a second IF signal. The second hybrid coupler combines the first IF signal and the second IF signal to produce an upper sideband of the IF signals and a lower sideband of the IF signals. The use of the traveling-wave mixers allow for a wide bandwidth operation of the image rejection mixer.

Wideband image rejection mixer

An amplifier has an input port, an output port, N gain elements in parallel, an input power splitter coupled between the input port of the amplifier and the input ports of the N gain elements, an output resistor chain extending between the output ports of the first through Nth gain elements, and an output power combiner coupled between the output ports of the N gain elements and the output port of the amplifier. The output power combiner presents a corresponding input impedance to each of the N gain elements. At least two of the input impedances presented by the output power combiner to the N gain elements are substantially different from each other.

Impedance transformer for amplifier and amplifier including the same

An integrated circuit including a distributed amplifier is disclosed. The integrated circuit includes a plurality of amplification stages, each stage connected to an input signal and an output signal. At least one amplification stage includes an amplification transistor such as a field effect transistor (FET) having a gate, a source, and a drain, the gate connected to the input signal and a feedback path between the drain and the gate. The feedback path is implemented with another FET having a gate, a source, and a drain; its gate is connected to a control signal; its drain is connected to the drain of the amplification FET; and its source is connected to the gate of the amplification FET. The feedback path provides variable resistive feedback and allows the amplification FET to operate at its linear response portion of its characteristic curve even when its gain is controlled by a control signal.

Linear variable gain traveling wave amplifier

Monolithic transformer based amplifier for integrated circuits. The amplifier includes an input transformer with a first impedance transforming ratio. The input transformer includes a coupled line structure. An amplification circuit is coupled to the input transformer. The amplifier also includes an output transformer with a second impedance transforming ratio that is coupled to the amplification circuit.

Growing community of inventors

San Jose, CA, United States of America

Kohei Fujii