Nippon Steel Corporation

United Microelectronics Corp.

Oki Electric Industry Co., Ltd.

Kohei Eguchi

Katsuki Hazama

Atsushi Kawasaki

Fumitaka Sugaya

Shoichi Iwasa

Yuichi Egawa

Wataru Yokozeki

Hideki Fujikake

Tatsuya Kawamata

Akio Ishikawa

Kazuo Ishiba

A ranging signal Rgenerated by a signal generator and reaches to a signal checker via a working system transmission line, a loop circuit, and an auxiliary system transmission line. The signal checker measures a delay time from the generation to the arrival of the signal R. A ranging signal Rgenerated by the signal generator and reaches to a signal checker via an auxiliary system transmission line, a loop circuit, and an auxiliary system transmission line. The signal checker measures a delay time from the generation to the arrival of the signal R. A delay time of the working system transmission line is calculated from the delay times of the signals Rand R. Disruption of the services provided by the other ONUs can be prevented since the working system transmission line is not used for upstream communication of the ranging signals Rand R

Optical access system and ranging method for optical access system

A semiconductor device and a method for manufacturing the same and method for deleting information in use of the semiconductor device, in which field shield isolation or a trench type isolation between elements is used with suppression of penetration of field oxide into element active region of the device, that is, a defect involved in conventional LOCOS type process, are disclosed. A non-LOCOS insulating device isolation block is formed in a semiconductor substrate. The non-LOCOS insulating device isolation block uses a field shield element isolation structure or trench type element isolation structure. After gate electrode wiring layers are formed in a field region and an active region to the same level, a pad polysilicon film formed on the entire surface to cover the patterns of these gate electrode wiring layers is polished by chemical mechanical polishing (CMP) using the cap insulating films of the gate electrode wiring layers as stoppers, thereby forming the gate electrode wiring layers into separated patterns. With this arrangement, even when the width of the gate electrode wiring layer is reduced to the exposure limit in photolithography, the pad polysilicon film can be separated and patterned.

Semiconductor device, a method of manufacturing the semiconductor device and a method of deleting information from the semiconductor device

A semiconductor device has, in one embodiment, two wells of different conductivity types formed in a semiconductor substrate. The two wells are arranged to be adjacent to each other to form a junction therebetween. A field oxide film is formed to cover the junction at a main surface of the semiconductor substrate. Other field oxide films or field-shield isolation structures may be formed to isolate circuit elements from one another in the wells.

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS

A semiconductor device has field shield isolation or trench type isolation between elements which suppresses penetration of field oxide into an element active region of the device. A common gate is located between two MOS transistors, which may be of opposite conductivity type. After gate electrode wiring layers are formed in a field region and an active region to the same level, a pad polysilicon film formed on the entire surface to cover the patterns of these gate electrode wiring layers, which are in separated patterns.

Semiconductor device having multiple transistors sharing a common gate

A packet transmitting method of processing a packet having a control information area and a user information area by a functional block in a node and, thereafter, transmitting the packet from the node. Whether information of the user information area is useless for the user or not is discriminated on the basis of information of the control information area or the user information area. The packet judged to be useless is converted into a predetermined format in which the number of alternating times of a bit pattern has been reduced and the packet is allowed to pass through the functional block. The bit pattern of the packet is returned to a state before the conversion at least before the packet is transmitted from the node.

Method and apparatus for transmitting packets and network using the same

Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide

Semiconductor device having semiconductor regions of different conductivity types isolated by field oxide, and method of manufacturing the same

When a capacitor is formed on a semiconductor substrate, a lower electrode of the capacitor is first formed. After an insulating film is formed on the lower electrode, it is selectively etched until the lower electrode is exposed, and in this way, a hole portion is formed in the insulating film. After a ferroelectric film is formed inside the hole portion and on the insulating film, the ferroelectric film is polished and removed by a chemical-mechanical polishing method in such a manner as to leave the ferroelectric film inside the hole portion. Thereafter, an upper electrode of the capacitor is formed on the ferroelectric film.

Semiconductor device and production method of a semiconductor device

In a semiconductor device and a method for manufacturing the semiconductor device, a width of an element isolation region is reduced by a field-shield. A silicon oxide film of a side wall of a polycrystal silicon film is fabricated by thermally oxidizing a side wall of the polycrystal silicon film, while using a silicon nitride film as an antioxidation film. A width of a field-shield electrode made of the polycrystal silicon film is made smaller than a limit value of the very fine processing.

Growing community of inventors

Tokyo, Japan

Kohei Eguchi