Samsung Display Co., Ltd.

Samsung Displayco., Ltd.

Kohei Ebisuno

Jun Hee Lee

Yong Ho Yang

Dong Hyun Son

Sung Hoon Moon

Sung Jun Kim

Deok Hoi Kim

Sanghoon Oh

Jin Hee Jeon

Jong Min Lee

Nak Cho Choi

Jingoo Jung

Jin-Suk Lee

Jongmin Lee

Sugwoo Jung

Youngin Hwang

In Jun Bae

Sunghoon Moon

Kyunghyun Choi

Joohyeon Jo

Heeyeon Kim

Jinsuk Lee

Yongseon Jo

Illhwan Lee

Sungjun Kim

Donghyun Son

Jaesoo Jung

Shinbeom Choi

Byungno Kim

Nalae Lee

Changha Kwak

Seongjun Lee

Heeseong Jeong

Ae Shin

Young In Hwang

Tae Sik Kim

Joo Hyeon Jo

Eung Taek Kim

Jin Suk Lee

Sang Hoon Oh

Hwang Sup Shin

Suk Hoon Ku

Jinseok Oh

Jung Mi Choi

Hee Yeon Kim

Jun Young Kim

Na Lae Lee

Taek Geun Lee

Jin Suk Seo

Hong Jun Choi

Youngwon Kim

Pil Soo Ahn

Kwanyong Pak

Hee Jun Lee

A display device includes a substrate including an opening area, a peripheral area adjacent to the opening area, and a display area adjacent to the peripheral area; a semiconductor layer overlapping the display area, disposed on the substrate, and including a channel; a gate electrode overlapping the channel of the semiconductor layer; an insulating layer disposed on the gate electrode, and including a first inorganic insulating layer and a second inorganic insulating layer disposed on the first inorganic insulating layer; a first electrode disposed on the insulating layer; an emission layer disposed on the first electrode; and a second electrode disposed on the emission layer, wherein the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area.

Display device and manufacturing method thereof

A display device includes: a substrate including a display area and a peripheral area surrounding an opening; a transistor disposed in the display area; a first electrode electrically connected to the transistor; an auxiliary layer disposed between the transistor and the first electrode and overlapping the first electrode in a plan view; a pixel definition layer overlapping the first electrode and an edge of the auxiliary layer in the plan view; an intermediate layer, an emission layer, and a second electrode disposed on the first electrode; at least one or more dams disposed on the peripheral area; and an encapsulation layer disposed on the light-emitting element. The intermediate layer includes a cutting part disposed between the display area and the opening.

Display device

Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

Thin-film transistor, display apparatus including the same, and method of manufacturing display apparatus

A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.

Display apparatus and method of manufacturing the same

A display device includes: a substrate including a display area and a non-display area; a transistor and a light emitting element, which are disposed on the display area; a pad portion disposed in the non-display area, where the pad portion includes a first metal pattern; and a printed circuit board or a data driver, which is connected with the pad portion. The transistor includes a semiconductor layer disposed on the substrate and a source electrode or a drain electrode which is electrically connected with the semiconductor layer. The source electrode or the drain electrode includes a first layer including a first metal, a second layer including a second metal, and a third layer including the first metal, where the first metal pattern includes the first metal, and is connected with the printed circuit board or the data driver.

Display device having improved reliability of pad portion

A display apparatus includes a main display area, and a component area including pixel groups spaced apart from each other and a transmission area between the pixel groups. The display apparatus further includes a substrate including a first base layer, a compensation layer, a first barrier layer, and a second barrier layer sequentially stacked on one another, a bottom metal layer between the first barrier layer and the second barrier layer, a buffer layer on the second barrier layer, main display elements on the substrate of the main display area, and auxiliary display elements on the substrate of the component area.

A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

An organic light emitting diode display includes a substrate, a plurality of pixels disposed on the substrate, a plurality of transmissive windows spaced apart from the pixels, and a light blocking member disposed between one of the pixels and one of the transmissive windows. The pixels display an image, and light is transmitted through the transmissive windows. Each pixel includes a transistor including a plurality of electrode members disposed in different layers on the substrate. The light blocking member includes a plurality of light blocking sub-members respectively disposed in the same layers as the plurality of electrode members.

Organic light emitting diode display

A display panel, in which a main display area, and a component area including a plurality of pixel groups and a transmission area are defined, includes a substrate, an inorganic insulating layer disposed on the substrate, where a first hole is defined through the inorganic insulating layer to correspond to the transmission area, a plurality of main display elements disposed on the inorganic insulating layer in the main display area, and a plurality of auxiliary display elements disposed on the inorganic insulating layer and corresponding to the pixel groups, respectively. The substrate includes a first base layer, a first barrier layer, a second base layer, a compensation layer, and a second barrier layer, which are stacked one on another, and a refractive index of the compensation layer has a value between a refractive index of the second base layer and a refractive index of the second barrier layer.

Display panel and display apparatus including compensation layer

A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.

Method of manufacturing thin film transistor and display device including polishing capping layer coplanar with active layer

Display device including thin film transistor with active layer portions having different thicknesses

A display device includes a scan line that extends in a first direction on a substrate and that transmits a scan signal; a data line that extends in a second direction that intersects the first direction and that transmits a data signal; a driving voltage line that extends in the second direction and that transmits a driving voltage; a transistor that includes a second transistor connected to the scan line and the data line and a first transistor connected to the second transistor; a light emitting device connected to the transistor; and a conductive pattern disposed between the substrate and the first transistor, where each of the first and second transistors includes an active pattern with a stacked first semiconductor layer and a second semiconductor layer, which have different crystalline states.

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Yongin-si, South Korea

Kohei Ebisuno