Fuji Electric Co., Ltd.

Fuji Electric Systems Co. Ltd.

Denso Corporation

Fuji Electric Holdings Co., Ltd.

Fuji Electric Device Technology Co., Ltd.

Octec, Inc.

Kyushu University

Koh Yoshikawa

Kenichi Iguchi

Haruo Nakazawa

Motoyoshi Kubouchi

Makoto Asai

Takeshi Fujii

Masaki Koyama

Kosuke Yoshida

Hiroki Wakimoto

Yasukazu Seki

Nao Suganuma

Hitoshi Abe

Soichi Yoshida

Seiji Momota

Takashi Shiigi

Tetsutaro Imagawa

Katsuya Okumura

Manabu Takei

Noriyuki Iwamuro

Masahito Otsuki

Tsunehiro Nakajima

Yoshifumi Okabe

Masaaki Ogino

Akio Sugi

Kouta Takahashi

Shunsuke Tanaka

Katsunori Ueno

Yuichi Onozawa

Tomoyuki Yamazaki

Setsuko Wakimoto

Toshiyuki Matsui

Hiroshi Ikenoue

Hiroshi Kanemaru

Akihiro Ikeda

Tanemasa Asano

Masayuki Momose

Hitoshi Kuribayashi

Provided is a semiconductor device including a semiconductor substrate having a first dopant of a first conductivity type and a second dopant of a second conductivity type, both the first dopant and the second dopant being distributed in an entire part of the semiconductor substrate, the semiconductor substrate including a drift region of the first conductivity type, a dielectric film provided on an upper surface of the semiconductor substrate, a high concentration region of the first conductivity type provided in contact with the dielectric film below the dielectric film and having a higher doping concentration than the drift region, and a fall off region that is provided in contact with the dielectric film below the dielectric film and in which a concentration of the dopant of the second conductivity type decreases toward the dielectric film.

Semiconductor device and manufacturing method

Provided is a semiconductor device, including: a semiconductor substrate including a bulk donor; an active portion provided on the semiconductor substrate; and an edge termination structure portion provided between the active portion and an end side of the semiconductor substrate on a upper surface of the semiconductor substrate; wherein the active portion includes hydrogen, and has a first high concentration region with a higher donor concentration than a bulk donor concentration; and the edge termination structure portion, which is provided in a range that is wider than the first high concentration region in a depth direction of the semiconductor substrate, includes hydrogen, and has a second high concentration region with a higher donor concentration than the bulk donor concentration.

A semiconductor device includes trench portions arrayed in a first direction on an upper surface side of a semiconductor substrate, a first conductivity type lower surface region provided in a part of a lower surface of the semiconductor substrate, a second conductivity type base region provided on the upper surface side, a first conductivity type first region disposed between the base region and the lower surface region, a first conductivity type upper surface region provided on an upper surface of the semiconductor substrate, and a second conductivity type bottom region disposed continuously in the first direction to be in contact with bottom portions of the trench portions. In a cross section along the first direction and perpendicular to the upper and lower surfaces and passing through the lower surface region, one end portion of the bottom region in the first direction locates directly above the lower surface region.

Semiconductor device and fabrication method for semiconductor device

Between a source electrode () of a main device () and a current sensing electrode () of a current detection device (), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator () is larger than a product of the resistor and maximal current flowing through the current detection device () with reverse bias. A diffusion length of a p-body region () of the main device () is shorter than that of a p-body () of the current detection device (). A curvature radius at an end portion of the p-body region () of the main device () is smaller than that of the p-body () of the current detection device (). As a result, at the inverse bias, electric field at the end portion of the p-body region () of the main device () becomes stronger than that of the p-body region () of the current detection device (). Consequently, avalanche breakdown tends to occur earlier in the main devicethan the current detection device ().

Semiconductor device

A fabrication method for a semiconductor device includes measuring a thickness of a semiconductor substrate in which a bulk donor of a first conductivity type is entirely distributed, adjusting an implantation condition in accordance with the thickness of the semiconductor substrate and implanting hydrogen ions from a lower surface of the semiconductor substrate to an upper surface side of the semiconductor substrate, and annealing the semiconductor substrate and forming, in a passage region through which the hydrogen ions have passed, a first high concentration region of the first conductivity type in which a donor concentration is higher than a doping concentration of the bulk donor.

A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.

A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer. The semiconductor substrate includes a hydrogen-donor introduced part, of which a concentration of a hydrogen donor is greatest at a depth position that is separate from bottoms of the trenches by a distance at least two times of the depth of the trenches. The impurity concentration of an impurity dopant of the first-conductivity-type substrate being lower than that of the first-conductivity-type epitaxial layer. A difference between a first resistivity, corresponding to a total impurity concentration of the impurity dopant and the hydrogen donor of the first-conductivity-type substrate, and a second resistivity, corresponding to the impurity concentration of the impurity dopant of the first-conductivity-type epitaxial layer, is at most 20%.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device having a voltage resistant structure in a first aspect of the present invention is provided, comprising a semiconductor substrate, a semiconductor layer on the semiconductor substrate, a front surface electrode above the semiconductor layer, a rear surface electrode below the semiconductor substrate, an extension section provided to a side surface of the semiconductor substrate, and a resistance section electrically connected to the front surface electrode and the rear surface electrode. The extension section may have a lower permittivity than the semiconductor substrate. The resistance section may be provided to at least one of the upper surface and the side surface of the extension section.

Manufacturing method of semiconductor device having a voltage resistant structure

When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a laser in a region where the control of the concentration in the SiC substrate is not necessary almost at all. A SiC semiconductor device having withstanding high voltage is manufactured at a lower temperature process compared to ion implantation process. A method of manufacturing a silicon carbide semiconductor device includes forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate; forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology; forming a Schottky electrode in contact with the drift layer; and forming, on the other main surface of the silicon carbide substrate, a cathode electrode.

Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Semiconductor device having a voltage resistant structure

Impurity elements are doped at a high concentration exceeding a thermodynamic equilibrium concentration into a solid material having an extremely small diffusion coefficient of the impurity element. A method for doping impurities includes steps for depositing source film made of material containing impurity elements with a film thickness on a surface of a solid target object (semiconductor substrate) made from the solid material. The film thickness is determined in consideration of irradiation time per light pulse and the energy density of the light pulse. The method also includes a step for irradiating the source film by the light pulse with the irradiation time and the energy density so as to dope the impurity elements into the target object at a concentration exceeding a thermodynamic equilibrium concentration.

Method for doping impurities, method for manufacturing semiconductor device

A semiconductor device includes a drift region of a first conductivity type, a channel forming region of a second conductivity type that is selectively provided in a first main surface of the drift region, a first main electrode region of the first conductivity type that is selectively provided in an upper part of the channel forming region, a second main electrode region of the second conductivity type that is provided in a second main surface of the drift region, and a high-concentration region of the first conductivity type that is provided in a portion of the drift region below the channel forming region so as to be separated from the channel forming region. The high-concentration region has a higher impurity concentration than the drift region and the total amount of first-conductivity-type impurities in the high-concentration region is equal to or less than 2.0&#xd7;10cm.

Semiconductor device with high concentration region

Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p-type isolation layer. A p-type region is provided and is electrically connected to the p-type isolation layer. The p-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.

Method of manufacturing semiconductor device

Growing community of inventors

Matsumoto, Japan

Koh Yoshikawa