The Furukawa Electric Co., Ltd.

Koh Li

Yoshihiro Sato

Sadahiro Kato

Takehiko Nomura

Seikoh Yoshida

Masayuki Iwami

Hiroshi Kambayashi

Nariaki Ikeda

Shusuke Kaya

Masatoshi Ikeda, Legal Representative

In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the active layer to a depth reaching the silicon substrate. A first electrode is formed on an internal wall surface of the trench and extends from the top surface of the active layer to the silicon substrate. A second electrode is formed on the active layer to define a current path between the first electrode and the second electrode via the active layer in an on-state of the device. A bottom electrode is formed on a bottom surface of the silicon substrate and defines a bonding pad for the first electrode. The first electrode is formed of metal in direct ohmic contact with both the silicon substrate and the active layer.

GaN-based semiconductor device and method of manufacturing the same

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Tokyo, Japan

Koh Li