Radiation Monitoring Devices, Inc.

Kofi Vanderpuye

Richard C Farrell

Richard Myers

Mickel McClish

Solid state avalanche photodiode devices and methods of producing the same are described herein.

Avalanche photodiode and methods of forming the same

A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top surface of the semiconductor wafer. The bottom surface and the top surface are opposed surfaces. Each of the bottom trenches is substantially parallel to and substantially juxtaposed to an associated one of the top trenches. The method further includes doping the semiconductor wafer with at least one p-type dopant to form a p-region that defines at least one n-well within the p-region, wherein a p-n junction is formed substantially at an interface of the n-well and the p-region; and removing a portion of the bottom surface to form a remaining-bottom surface, wherein a portion of the n-well forms a portion of the remaining-bottom surface.

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Belmont, MA, United States of America

Kofi Vanderpuye