Imec Vzw

Katholieke Universiteit Leuven

Katholieke Universiteit Leuven, Ku Leuven R&d

Imec

Katholieke Universiteit Leuven, K.u. Leuven Research & Development

Koen Martens

Pol Van Dorpe

Simone Severi

Geert Hellings

Karolien Jans

Nadine Collaert

Chengxun Liu

Gouri Sankar Kar

Roger Loo

Jorge Adrian Kittl

Mihaela Ioana Popovici

Rita Vos

Eddy Kunnen

Chang Chen

Adrien Vaysset

Kris Covens

David Barge

Sybren Santermans

Bart Vermeulen

Camila Dalben Madeira Campos

Gabrielle Woronoff

Jorge Kittl

A sensor is provided. The sensor includes a field effect transistor comprising: an active region comprising a source region, a drain region, and a channel region between the source region and the drain region; a dielectric region on the channel region; an enzyme coupled to the dielectric region, the enzyme having an active site for interacting with a substrate; an electrolyte-screening layer coupled to the dielectric region, covering part of the enzyme while leaving the active site uncovered, thereby permitting interaction of the substrate with the active site, and a fluidic gate region to which the active site of the enzyme is exposed. A biosensing device including one or more of the sensors is also provided.

Field-effect transistor-based biosensor

A cyclic capillary electrophoresis device includes a capillary channel that forms a closed loop. The capillary channel comprises an inner half facing toward a space enclosed by the loop, where the inner half having an inner wall of first charge density, and an outer half facing away from the space enclosed by the loop, where the outer half having an inner wall surface of second charge density. A difference between the first and the second charge densities exists or can be turned on. The difference is configured to create a smaller average electroosmotic flow velocity in the inner half than in the outer half.

Cyclic capillary electrophoresis device

The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the voltage control of magnetic anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO(STO) stack on the bottom electrode layer by atomic layer deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and forming a perpendicular magnetic anisotropy (PMA) promoting layer on the magnetic layer, the PMA promoting layer being configured to promote PMA in the magnetic layer.

Magnetic structure for magnetic device

A method for forming a sensor is provided. The method includes: providing an active region comprising a channel having: a length, and a periphery consisting of one or more surfaces having said length, said periphery comprising a first part and a second part, each part having said length, the first part representing from 10 to 75% of the area of the periphery and the second part representing from 25 to 90% of the area of the periphery; providing a first dielectric structure on the entire first part, the first dielectric structure having a maximal equivalent oxide thickness; and providing a second dielectric structure on the entire second part, the second dielectric structure having a minimal equivalent oxide thickness larger than the maximal equivalent oxide thickness of the first dielectric structure.

Method for forming a bioFET sensor including semiconductor fin or nanowire

A sensor is provided, the sensor including a field effect transistor comprising: (a) an active region comprising: (i) a source region and a drain region defining a source-drain axis and (ii) a channel region between the source region and the drain region; (b) a dielectric region on the channel region, comprising at least a first zone on a first portion of the channel region and a second zone on a second portion of the channel region, the first zone measuring from 1 to 100 nm in the direction of the source-drain axis and being adapted to create a different threshold voltage for the first portion of the channel region than for the second portion of the channel region, and (c) a fluidic gate region to which a top surface of the dielectric region is exposed. A biosensing device comprising such a sensor, a method for using such a sensor, and a process for making such a sensor are also provided.

A device and a method for performing an assay is provided. The assay device, which may be used for determining the concentration of an analyte in a sample, includes a plurality of microchambers and a Field-effect transistor (FET) arranged at the bottom of each of the plurality of microchambers. Capture probe molecules for the analyte can be arranged within the plurality of microchambers such that each microchamber contains at most one capture probe molecule. The FET can be arranged in said microchamber to give a readable output signal based on binding of the analyte, or competitor to the analyte, with the capture probe molecule.

Assay with digital readout

In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (), comprising: i) a source region () and a drain region (), defining a source-drain axis; ii) a channel region () between the source region () and the drain region (); iii) a nanopore (), defined as an opening in the channel region () which completely crosses through the channel region (), oriented at an angle to the source-drain axis, having a first orifice () and a second orifice (), and being adapted for creating a non-linear potential profile between the first () and second () orifice.

Nanopore FET sensor with non-linear potential profile

Examples include a method for forming an intermediate in the fabrication of a field-effect transistor sensor, the method comprising: providing a substrate having a substrate region comprising a gate dielectric thereon and optionally a nanocavity therein, providing a sacrificial element over the substrate region, providing one or more layers having a combined thickness of at least 100 nm over the sacrificial element, opening an access to the sacrificial element through the one or more layers, and optionally selectively removing the sacrificial element, thereby opening a sensor cavity over the substrate region; wherein the sacrificial element is removable by oxidation and wherein selectively removing the sacrificial element comprises an oxidative removal.

Protecting a substrate region during fabrication of a FET sensor

The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.

Magnetic memory having multiple gates and method of operating same

Disclosed are methods for manufacturing semiconductor devices and the devices thus obtained. In one embodiment, the method comprises obtaining a semiconductor substrate comprising a germanium region doped with n-type dopants at a first doping level and forming an interfacial silicon layer overlying the germanium region, where the interfacial silicon layer is doped with n-type dopants at a second doping level and has a thickness higher than a critical thickness of silicon on germanium, such that the interfacial layer is at least partially relaxed. The method further includes forming over the interfacial silicon layer a layer of material having an electrical resistivity smaller than 1&#xd7;10&#x3a9;cm, thereby forming an electrical contact between the germanium region and the layer of material, wherein the electrical contact has a specific contact resistivity below 10&#x3a9;cm.

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Ghent, Belgium

Koen Martens