Hamamatsu-photonics K.k.

Hamamatsu Photonics Kabushiki Kaisha

Kabushiki Kaisha Morita Seisakusho

Nippon Telegraph and Telephone Corporation

J. Morita Manufacturing Corporation

Ntt Advanced Technology Corporation

Koei Yamamoto

Terumasa Nagano

Kazuhisa Yamamura

Masaharu Muramatsu

Kenichi Sato

Takashi Baba

Ryutaro Tsuchiya

Hisanori Suzuki

Kazuhisa Miyaguchi

Keisuke Mori

Shigeyuki Nakamura

Takuya Fujita

Kenji Makino

Yusei Tamura

Motohiro Suyama

Masakazu Suzuki

Yasuhito Yoneta

Akifumi Tachibana

Akira Sakamoto

Naoto Sakurai

Masatoshi Fujimoto

Takao Makino

Hiroshi Akahori

Takashi Iida

Shunsuke Adachi

Yuichi Miyamoto

Hiroki Suzuki

Yuki Okuwa

Toshihiro Oikawa

Seiichiro Mizuno

Shinichiro Aoshima

Hironori Takahashi

Takashi Sakamoto

Hiroshi Okamoto

Kazunari Matoba

Yoichi Kawada

Kazuo Fujiura

Seiji Toyoda

Haruyasu Ito

Shogo Yagi

Shinya Iwashina

Yasuhito Miyazaki

Tadashi Sakamoto

Shigeru Sakamoto

Yoshitaka Ishikawa

Joji Yamaguchi

Masaomi Takasaka

Mitsutaka Takemura

Yuzo Sasaki

Shingo Oishi

Masanori Sahara

Toshiyuki Izawa

Eiichi Sugai

Koji Yoneyama

Keiji Abe

Ryuta Yamada

Kenzo Hayatsu

Makoto Oishi

Mahiro Yamada

Yukihiko Ushiyama

Toshiharu Moriguchi

Notio Takahashi

A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

Photodetector device having avalanche photodiodes two-dimensionally arranged on a semiconductor layer and quenching element connected in series to the photodiodes

Photodetector device having avalanche photodiodes two-dimensionally arranged on a compound semiconductor layer and quenching element connected in series to the photodiodes

A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

Light detection device

A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

Photoelectric conversion element and photoelectric conversion module

A photodetecting device includes a semiconductor photodetecting element including a plurality of pixels distributed two-dimensionally and a mount substrate including a plurality of signal processing units arranged to process output signals from the corresponding pixels. The semiconductor photodetecting element includes, for each of the pixels, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors each electrically connected in series with a respective avalanche photodiodes, and a through-electrode electrically connected to the plurality of quenching resistors. Each of the signal processing units includes a current mirror circuit electrically connected to the plurality of avalanche photodiodes via the corresponding through-electrode and arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes. The number of signal processing units included on the mount substrate is more than the number of light receiving regions in each of the pixels.

Photodetecting device with weak light signal detection and low power consumption

Photodetector device comprising each of a plurality of passive quenching elements connected in series to at least one avalanche photodiode and a capacitative element connected in parallel to the passive quenching element

A radiation detector includes a substrate including a charge collection electrode, a radiation absorption layer disposed on one side with respect to the substrate and including perovskite structure particles and a binder resin; and a voltage application electrode disposed on the one side with respect to the radiation absorption layer, a bias voltage being applied to the voltage application electrode so that a potential difference is generated between the voltage application electrode and the charge collection electrode.

Radiation detector and manufacturing method for radiation detector

An optical sensor includes: a light emitting element; a lower substrateon which the light emitting elementis provided; an upper substrateprovided so that the light emitting elementis positioned between the upper substrateand the lower substrate; and an optical blockprovided on the upper substrate. The upper substrateincludes a division-type photodiode SD. The optical blockis configured to reflect light emitted from the light emitting elementtoward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.

Optical sensor capable of being applied to a tilt sensor

A light receiving region includes a plurality of light detecting sections. The light detecting sectionshas a second contact electrodeA. The second contact electrodeA is arranged at a position overlapping a first contact electrodeA, so as to contact the first contact electrode. Further, a resistive layerB is continued to the second contact electrodeA.

Photodiode array

Provided is a swept light source including one end surface coupled to a wavelength filter constituted of a diffraction grating and an end mirror via a light deflector and another end surface including a gain medium facing an output coupling mirror and which configures a laser cavity between the end mirror and the output coupling mirror, wherein a drive voltage having an AC voltage on which a DC bias voltage is superimposed is output from a control voltage source of the light deflector to an electrode pair of an electro-optic crystal, light is radiated from a light emitter to the electro-optic crystal, and incident light from the gain medium incident along an optical axis perpendicular to a direction of an electric field formed by the control voltage is deflected in a direction parallel to the electric field, so that wavelength sweeping is performed.

Swept light source and method for controlling the same

A radiation image detecting device includes a photodetecting element that detects fluorescence light, and a prism that is disposed on an optical path of excitation light traveling toward an imaging plate and between the photodetecting element and the imaging plate. The prism includes, as surface thereof, a side face that is opposed to the imaging plate, and a side face and a side face that are inclined relative to the side face. The prism is disposed so that the excitation light incident through the side face propagates inside and is output from the side face and so that reflection from the imaging plate incident through the side face propagates inside and is output from the side face. The photodetecting element is disposed so as to be opposed to a region different from a region where the reflection from the imaging plate is output, in the surface of the prism.

Radiation image detection device

A radiological image reading device includes a MEMS mirror that scan a recording medium on which a radiological image is recorded with excitation light; a light detecting element that includes a plurality of channels, each channel including a photodiode array, and detects light emitted from an irradiation position of the excitation light on the recording medium; a MEMS mirror driving circuit that determines as a light detection channel to detect the light, a channel corresponding to the irradiation position of the excitation light, out of the plurality of channels; and a reading circuit that reads the detection result of the light from the channel determined by the MEMS mirror driving circuit.

Device for reading radiological images

An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

Ultraviolet sensor and ultraviolet detecting device

Prepared is an ntype semiconductor substratehaving a first principal surfaceand a second principal surfaceopposed to each other, and having a ptype semiconductor regionformed on the first principal surfaceside. At least a region opposed to the ptype semiconductor regionin the second principal surfaceof the ntype semiconductor substrateis irradiated with a pulsed laser beam to form an irregular asperity. After formation of the irregular asperity, an accumulation layerwith an impurity concentration higher than that of the ntype semiconductor substrateis formed on the second principal surfaceside of the ntype semiconductor substrate. After formation of the accumulation layer, the ntype semiconductor substrateis subjected to a thermal treatment.

Semiconductor light-detecting element

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Hamamatsu, Japan

Koei Yamamoto